Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell(Special Issue on Nonvolatile Memories)
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概要
- 論文の詳細を見る
A 1T2C-type ferroelectric memory cell, in which two ferroelectric capacitors with the same area are connected to the gate of an usual MOSFET with a SiO_2/Si interface, was fabricated and characterized. The relations between various device parameters and characteristics of memory cell were investigated by using SPICE simulation. It was found from the simulation results that the memory window significantly changed by the device parameters, which means that the operation voltage of the memory cell can be well controlled by these parameters. The fabricated cell is composed of a stacked gate structure of Pt/SBT/Pt/Ti/SiO_2/Si with the area ratio of the MOS capacitor(S_O)to the ferroelectric capacitor(S_F)of 6 or 10. Nonvolatile memory operation was confirmed, and the obtained memory window coincided with the simulated results qualitatively. Furthermore, the current on/off ratio in the read-out operation was larger than 3-order-of magnitude and the data retention time was longer than 6×10^4 seconds. It was also predicted that low voltage operation was possible if the devide parameters were optimized.
- 社団法人電子情報通信学会の論文
- 2001-06-01
著者
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Yoon Sung-min
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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OGASAWARA Satoru
R&D Association for Future Electron Devices
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YOON Sung-Min
R&D Association for Future Electron Devices
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Ogasawara S
R&d Assoc. Future Electron Devices Tokyo Jpn
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