Ishiwara Hiroshi | Frontier Collaborative Research Center Tokyo Institute Of Technology
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概要
関連著者
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Wang Xusheng
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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Koo Bon
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kang Seung-kuk
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kijima T
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kijima Takeshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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OGASAWARA Satoru
R&D Association for Future Electron Devices
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YOON Sung-Min
R&D Association for Future Electron Devices
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WANG Xusheng
Functional Materials Research Laboratory, Tongji University
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Wang X
Functional Materials Research Laboratory Tongji University
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Ogasawara S
R&d Assoc. Future Electron Devices Tokyo Jpn
著作論文
- Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell(Special Issue on Nonvolatile Memories)
- Characteristics of Paired Bi_La_xTi_3O_ (BLT) Capacitors Suitable for 1T2C-Type FeRAM
- Preaparation of Ferroelectric Thin Films Using Sol-Gel Solutions Dissolved in Supercritical Carbon Dioxide
- Improvement of Electrical Property of Sol-Gel-Derived Lead Zirconate Titanate Thin Films by Multiple Rapid Thermal Annealing : Surfaces, Interfaces, and Films
- Structural and Electrical Properties of Ferroelectric Pb(Zr1-xTix)O3–SiO2 Glass–Ceramic Thin Films Derived by the Sol–Gel Method
- Characteristics of LaAlO_3 as Insulating Buffer Layers of Ferroelectric-Gate Field Effect Transistors