ISHIWARA Hiroshi | Frontier Collaborative Research Center, Tokyo Institute of Technology
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概要
関連著者
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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TOKUMITSU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yoon Sung-min
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kim Hyun-soo
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Tamura T
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Kijima T
Functional Devices Laboratories Sharp Corporation
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Kijima Takeshi
Technology Platform Research Center Seiko Epson Corporation
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Kijima Takeshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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ARIMOTO Yoshihiro
System LSI Development Labs., FUJITSU LABORATORIES LTD.
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TAMURA Tetsuro
R&D Association for Future Electron Devices, Frontier Collaborative Research Center, Tokyo Institute
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ARIMOTO Yoshihiro
Memory Device Lab., Fujitsu Laboratories Ltd.
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KATO Takumi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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OKAMOTO Kojiro
Frontier Collaborative Research Center, Tokyo Institute of Technology
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FUJISAKI Yoshihisa
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Okamoto Kojiro
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Fujisaki Y
R&d Association For Future Electron Devices
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Arimoto Y
System Lsi Development Labs. Fujitsu Laboratories Ltd.
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KIJIMA Takeshi
Technology Platform Research Center, SEIKO EPSON CORPORATION
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Kim Hyun-soo
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Okamoto Kenji
Department Of Applied Physics Osaka University
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Kuroiwa Takeharu
R&d Associations For Future Electron Devices:frontier Collaborative Research Center Tokyo Instit
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Sugahara Kazuyuki
R&d Associations For Future Electron Devices:frontier Collaborative Research Center Tokyo Instit
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Kim H‐s
Tokyo Inst. Technol. Yokohama Jpn
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FUNAKUBO Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Funakubo Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kang S‐k
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Koo Bon
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Kang Seung-kuk
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kijima T
Frontier Collaborative Research Center Tokyo Institute Of Technology
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OGASAWARA Satoru
R&D Association for Future Electron Devices
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YOON Sung-Min
R&D Association for Future Electron Devices
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JIMBO Takehito
Frontier Collaborative Research Center, Tokyo Institute of Technology
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SANO Haruyuki
Frontier Collaborative Research Center, Tokyo Institute of Technology
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TAKAHASHI Yuji
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Sano Haruyuki
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kuraoka Takuya
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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IMADA Shogo
Frontier Collaborative Research Center, Tokyo Institute of Technology
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KURAOKA Takuya
Frontier Collaborative Research Center, Tokyo Institute of Technology
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SATO Takehiko
R&D Associations for Future Electron Devices
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KUROIWA Takeharu
R&D Associations for Future Electron Devices
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SUGAHARA Kazuyuki
R&D Associations for Future Electron Devices
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KIJIMA Takeshi
R&D Association for Future Electron Devices
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FUJISAKI Yoshihisa
R&D Association for Future Electron Devices
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TOKUMITSU Eisuke
Presision & Intelligence Laboratory, Tokyo Institute of Technology
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Ishiwara H
Frontier Collaborative Research Center Tokyo Institute Of Technology
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FUJISAKI Yoshihisa
Research and Developmetn Association of Future Electron Devices
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ISEKI Kunie
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Imada Shogo
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Ogasawara S
R&d Assoc. Future Electron Devices Tokyo Jpn
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Fujisaki Yoshihide
Nhk Science & Technical Research Laboratories
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Iseki Kunie
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kijima Takeshi
Functional Devices Laboratories Sharp Corporaton
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Kato Takumi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Takahashi Yuji
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology:precision And Intelligence Labo
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Sato Takehiko
R&d Associations For Future Electron Devices:frontier Collaborative Research Center Tokyo Instit
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Fujisaki Yoshihisa
R&D Association for Future Electron Devices
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Fujisaki Yoshihisa
Research and Development Association of Future Electron Devices, Hatsumei-Kaikan Build. 5F, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
著作論文
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Improved Data Disturbance Effects in 1T2C-Type Ferroelectric Memory Array
- Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell(Special Issue on Nonvolatile Memories)
- Preparation of SrBi_2Ta_2O_9 Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using a Double Alcoholate Source
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Proposal of a Planar 8F^2 1T2C-Type Ferroelectric Memory Cell
- Characteristics of Paired Bi_La_xTi_3O_ (BLT) Capacitors Suitable for 1T2C-Type FeRAM
- Data Retention Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Diodes with SrBi_2Ta_2O_9 Ferroelectrics and Al_2O_3 Buffer Layers
- Preaparation of Ferroelectric Thin Films Using Sol-Gel Solutions Dissolved in Supercritical Carbon Dioxide
- A New Circuit Simulation Model of Ferroelectric Capacitors
- Preparation of Bi_La_Ti_3O_ Films on Ruthenium Electrodes
- A New Circuit Simulation Model of Ferroelectric Capacitors
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- A Novel Simulation Program with Integrated Circuit Emphasis (SPICE) Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- A Novel SPICE Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Correlation between Ferroelectricity and Grain Structures of Face-to-Face Annealed Strontium Bismuth Tantalate Thin Films
- Significant Enhancement of Bi_La_Ti_3O_ Ferroelectricity Derived by Sol-Gel Method
- Damage-Free and Hydrogen-Free Nitridation of Silicon Substrate by Nitrogen Radical Source