Tamura T | Silicon Technology Lab. Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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Tamura T
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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ARIMOTO Yoshihiro
System LSI Development Labs., FUJITSU LABORATORIES LTD.
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Arimoto Y
System Lsi Development Labs. Fujitsu Laboratories Ltd.
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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TAMURA Tetsuro
R&D Association for Future Electron Devices, Frontier Collaborative Research Center, Tokyo Institute
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Otani Seigen
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
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Otani Seigen
Advanced Technology Division Fujitsu Ltd.
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Takai K
Kyoto Univ. Kyoto‐shi Jpn
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ARIMOTO Yoshihiro
Memory Device Lab., Fujitsu Laboratories Ltd.
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KITSUREGAWA Masaru
Institute of Industrial Science, The University of Tokyo
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Yamada M
Ibaraki Univ. Ibaraki Jpn
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Yamada M
Process Development Division Fujitsu Ltd.
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KATO Kazumi
National Institute of Advanced Industrial Science and Technology (AIST)
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Yamada M
Sony Corp. Tokyo Jpn
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TAMURA Tetsuro
Process Development Division, Fujitsu Ltd.
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TAKAI Kazuaki
Process Development Division, Fujitsu Ltd.
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NOSHIRO Hideyuki
Process Development Division, Fujitsu Ltd.
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KIMURA Mami
Process Development Division, Fujitsu Ltd.
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OTANI Seigen
Process Development Division, Fujitsu Ltd.
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YAMADA Masao
Process Development Division, Fujitsu Ltd.
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Kimura Mami
Process Development Division Fujitsu Ltd.
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Kato Kazumi
National Inst. Of Advanced Industrial Sci. And Technol. (aist)
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Hoko Hiromasa
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Ashida Hiroshi
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
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Takai Kazuaki
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
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Tabuchi Yoshiaki
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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HASEGAWA Satoshi
Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering
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TAMURA Tetsuro
Silicon Technology Lab., FUJITSU LABORATORIES LTD.
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ARIMOTO Yoshihiro
O Ishiwara Lab.
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ISHIWARA Hiroshi
F-project, FUJITSU LABORATORIES LTD.
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MATSUURA Katsuyoshi
The authors are with Advanced Material and FRAM Development Dept., ULSI Development Div., FUJITSU LI
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TAMURA Tetsuro
The authors are with Advanced Material and FRAM Development Dept., ULSI Development Div., FUJITSU LI
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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TAMURA Takayuki
Information & Communication Systems Development Center, Mitsubishi Electric Corporation
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OGUCHI Masato
Institute of Industrial Science, The University of Tokyo
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Oguchi M
Institute Of Industrial Science The University Of Tokyo
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Kitsuregawa Masaru
Institute Of Industrial Science The University Of Tokyo
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Kimura M
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
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Kato Kazumi
National Industrial Research Institute Of Nagoya
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Kato Kazumi
National Institute Of Advanced Industrial Science And Technology
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Noshiro H
Process Development Division Fujitsu Ltd.
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Hasegawa Satoshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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ARIMOTO Yoshihiro
F-project, FUJITSU LABORATORIES LTD.
著作論文
- Influence of Electrode Contacts on Leakage Current of SrTiO_3 Capacitors
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Effect of Zr/Ti Ratio on the Reliability Characteristics Behavior of Sol-Gel Derived PZT Films on Pt/IrO_2 Electrode(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- High Performanee Parallel Query Processing on a 100 Node ATM Connected PC Cluster (Special Issue on New Generation Database Technologies)