Ishiwara Hiroshi | Precision And Intelligence Laboratory Tokyo Institute Of Technology
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概要
関連著者
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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TOKUMITSU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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ISHIWARA Hiroshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Yoon Sung-min
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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Tamura T
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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ARIMOTO Yoshihiro
System LSI Development Labs., FUJITSU LABORATORIES LTD.
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Arimoto Y
System Lsi Development Labs. Fujitsu Laboratories Ltd.
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TAMURA Tetsuro
R&D Association for Future Electron Devices, Frontier Collaborative Research Center, Tokyo Institute
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YOON Sung-Min
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kijima T
Functional Devices Laboratories Sharp Corporation
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Kijima Takeshi
Technology Platform Research Center Seiko Epson Corporation
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IMADA Shogo
Frontier Collaborative Research Center, Tokyo Institute of Technology
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ARIMOTO Yoshihiro
Memory Device Lab., Fujitsu Laboratories Ltd.
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OKAMOTO Kojiro
Frontier Collaborative Research Center, Tokyo Institute of Technology
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FUJII Gen
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Imada Shogo
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Okamoto Kojiro
Frontier Collaborative Research Center Tokyo Institute Of Technology
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SHOURIKI Shigeto
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Fujisaki Y
R&d Association For Future Electron Devices
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Fujii Gen
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Shouriki Shigeto
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Lee M
National Inst. Advanced Interdisciplinary Res.(nair) Tsukuba Jpn
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KIJIMA Takeshi
Technology Platform Research Center, SEIKO EPSON CORPORATION
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Moon Bum
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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KOINUMA Hideomi
Tokyo Institute of Technology
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Okamoto Kenji
Department Of Applied Physics Osaka University
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Koinuma Hideomi
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Koinuma Hideomi
Department Of Industrial Chemistry Faculty Of Engineering University Of Tokyo
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Koinuma Hideomi
Department Of Industrial Chemistry University Of Tokyo
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KATO Kazumi
National Institute of Advanced Industrial Science and Technology (AIST)
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YOSHIMOTO Mamoru
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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KAWASAKI Masashi
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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LEE Myung
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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Miyazaki Kenzo
Department Of Engineering Physics Faculty Of Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Kikuchi Hiromi
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Koinuma Hideomi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kawasaki Masashi
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kato Kazumi
National Inst. Of Advanced Industrial Sci. And Technol. (aist)
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Hoko Hiromasa
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Park Byung-eun
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Kijima Takeshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Sawaoka A
Tokyo Inst. Technol. Tokyo Jpn
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Sawaoka Akira
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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WAKABAYASHI Hitoshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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MIYAZAKI Keizo
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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FUKAO Kazuichi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Miyazaki K
Tokyo Inst. Technol. Yokohama Jpn
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Fukao K
Precision And Intelligence Laboratory Tokyo Institute Of Technology : (present Address) Kanagawa Wor
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Fukao Kazuichi
Precision And Intelligence Laboratory Tokyo Institute Of Technology:(present Address):kanagawa Works
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Kuraoka Takuya
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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KURAOKA Takuya
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Kamei T
Department Of Communications Engineering National Defense Academy
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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MIYAZAKI Kazuhiko
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Kamei Tatsuya
The Authors Are With The Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tabuchi Yoshiaki
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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HASEGAWA Satoshi
Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering
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TAMURA Tetsuro
Silicon Technology Lab., FUJITSU LABORATORIES LTD.
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ARIMOTO Yoshihiro
O Ishiwara Lab.
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ISHIWARA Hiroshi
F-project, FUJITSU LABORATORIES LTD.
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KIJIMA Takeshi
R&D Association for Future Electron Devices
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FUJISAKI Yoshihisa
R&D Association for Future Electron Devices
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TOKUMITSU Eisuke
Presision & Intelligence Laboratory, Tokyo Institute of Technology
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FUJISAKI Yoshihisa
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Yoshimoto Mamoru
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Wakabayashi H
Taiyo Yuden Co. Ltd. Gunma Jpn
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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IMADA Shogo
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TOKUMITSU Eisuke
The authors are with the Precision and Intelligence Laboratory, Tokyo Institute of Technology
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ISHIWARA Hiroshi
The authors are with the Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kato Kazumi
National Industrial Research Institute Of Nagoya
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Kato Kazumi
National Institute Of Advanced Industrial Science And Technology
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Kijima Takeshi
Functional Devices Laboratories Sharp Corporaton
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Hasegawa Satoshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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JYOKYU Katsuyoshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Jyokyu Katsuyoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology:(present Address)matsushita Elec
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ARIMOTO Yoshihiro
F-project, FUJITSU LABORATORIES LTD.
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Yoshimoto Masahiro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Fujisaki Yoshihisa
R&D Association for Future Electron Devices
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Koinuma Hideomi
National Institute for Materials Science (NIMS)
著作論文
- Formation and Characterization of Epitaxial TiO_2 and BaTiO_3/TiO_2 Films on Si Substrate
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
- Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
- Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
- Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
- Correlation between Ferroelectricity and Grain Structures of Face-to-Face Annealed Strontium Bismuth Tantalate Thin Films
- Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
- Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
- Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Formation of Conductive SrVO_3 Films on Si Substrates
- Proposal of a Novel Ferroelectric-Gate Field Effect Transistor with Separated Functions for Data read-Out and Data Storage