Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-01-30

著者

• ISHIWARA Hiroshi

  Precision and Intelligence Laboratory, Tokyo Institute of Technology

• Miyazaki Kenzo

  Department Of Engineering Physics Faculty Of Engineering Kyoto University

• Ishiwara Hiroshi

  Precision And Intelligence Laboratory Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Precision & Intelligence Laboratory Tokyo Institute Of Technology

• Sawaoka A

  Tokyo Inst. Technol. Tokyo Jpn

• Sawaoka Akira

  Research Laboratory Of Engineering Materials Tokyo Institute Of Technology

• WAKABAYASHI Hitoshi

  Precision and Intelligence Laboratory, Tokyo Institute of Technology

• MIYAZAKI Keizo

  Precision and Intelligence Laboratory, Tokyo Institute of Technology

• FUKAO Kazuichi

  Precision and Intelligence Laboratory, Tokyo Institute of Technology

• Miyazaki K

  Tokyo Inst. Technol. Yokohama Jpn

• Fukao K

  Precision And Intelligence Laboratory Tokyo Institute Of Technology : (present Address) Kanagawa Wor

• Fukao Kazuichi

  Precision And Intelligence Laboratory Tokyo Institute Of Technology:(present Address):kanagawa Works

• MIYAZAKI Kazuhiko

  Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

• Wakabayashi H

  Taiyo Yuden Co. Ltd. Gunma Jpn

関連論文

• Formation of Ferroelectric BaMgF_4 Films on GaAs Substrates
• Formation and Characterization of Epitaxial TiO_2 and BaTiO_3/TiO_2 Films on Si Substrate
• Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
• Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
• Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
• Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
• Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
• Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
• Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
• Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
• Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
• Single Crystalline Silicide Formation
• Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
• Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
• Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
• Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
• Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
• Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
• Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
• Electrical Characteristics of Neuron Pulse Oscillation Circuits Using Complementary Unijunction Transistors and MOSFETs
• Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
• Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
• On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
• Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
• Excitation Mechanism of 3250 and 4416 Å Laser Lines in the Cataphoretic He-Cd Laser Discharge
• Dispersion and Absorption Studies on the Doubly-Excited 5p^2 ^3P_ States of CdI
• Absorption Cross Sections for the Autoionizing Transitions 5s5p ^3P_-5p^2 ^3P_2 of CdI
• An Improvement of the Flash X-Ray Diffraction System by Using an Image Intensifier
• Effect of Pressure on the Ionic Conduction of Na-β-Alumina
• A Measurement System for Interior Projectile Motion and Particle-Velocity Histories for Impact Shock Study with a Two-Stage Light Gas Gun
• Improvement of Projectile Velocity and Impact Rate on a Target by Two-Stage Plasma Accelerator : Other Areas in Science and Engineering
• Debris Formation from an Aluminum Nitride Ceramic Plate by Microprojectile Impact
• A Stability of Wurtzite Type Boron Nitride under High Pressure
• Structure Determination of Boron Nitride Transformed by Shock Compression
• Shock Compression and Shock-Induced Radiation Measurements on Calcium Flouride
• Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure
• Halogen Cycle Operation Test under Microgravity Conditions Using Sounding Rocket
• Thermal Characteristics of an Electric Furnace under Micro-Gravity
• Diamond-Glass Composite Processing in a Microgravity Condition
• Unique Fine Microstructures of Iron Caused by Intense Shearing under Shock Compression
• Fabrication of Diamond-Glass Composite under Micro-Gravity
• Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
• Partial Switching Kinetics of Ferroelectric PbZr_xTi_O_3 Thin Films Prepared by Sol-Gel Technique ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Identification of Formation of Conically Converging Shock Waves in an Alumina-Sphere-Dispersed Copper Rod
• Anisotropic Heating of a Copper and Graphite Powder Mixture during an Electrical Column Explosion
• Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
• Simultaneous Emission of SRR and SFRL in InSb
• Temperature and Magnetic Tuning of Two-Photon Pumped PbTe Laser
• Emission Properties of Two-Photon Pumped InSb Laser under Magnetic Field
• Magnetic Tuning of InSb Laser Excited by a CO_2 Laser
• Growth of Crystalline SrTiO_3 Films on Si Substrates Using Thin Fluoride Buffer Layers and Their Electrical Properties
• Properties of Ferroelectric BaMgF_4 on Si(100), (110) and (111) Substrates Obtained by Post-Deposition Rapid Thermal Annealing
• Substrate Orientation Dependence of the Properties of Metal-Ferroelectric BaMgF_4-Silicon Capacitors by Post-Deposition Annealing
• Multi-bit Programming for 1T-FeRAM by Local Polarization Method
• A New Circuit Simulation Model of Ferroelectric Capacitors
• A New Circuit Simulation Model of Ferroelectric Capacitors
• A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
• Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
• Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
• Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
• Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
• Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
• Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
• Electrical Properties of Ferroelectric BaMgF_4 Films on Si Substrates ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Correlation between Ferroelectricity and Grain Structures of Face-to-Face Annealed Strontium Bismuth Tantalate Thin Films
• A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
• Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
• Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation
• Electrical Properties of Ferroelectric Gate HEMT Structures
• Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures
• Crystalline Quality and Electrical Properties of PbZr_xTi_O_3 Thin Films Prepared on SrTiO_3-Covered Si Substrates
• Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
• Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
• Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• Electrical Properties of Gallium Fluoride(GaF_3)/GaAs Interface with and without Sulfur Treatment
• Growth and Crystallinity of Ferroelectric BaMgF_4 Films on (111)-Oriented Pt Films
• Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation
• Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures
• Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write Operation
• Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures
• Ferroelectric Properties of BaMgF_4 Films Grown on Si(100), (111), and Pt(111)/SiO_2/Si(100) Structures
• Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZr_xTi_O_3 (PZT) Films
• Lattice Parameter Control of Epitaxially Grown Hexagonal LaF_3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF_3
• Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
• Measurement of Oscillator strengths of CdI 5s5p ^3P_-5p^2^3P_ by the Hook Method
• Application of Dye Laser to the Hook Method on the Population Measurement of Excited He and Ne Atoms in the Pulsed Discharge
• Preparation of PbTiO_3 Films Utilizing Self-Control Mechanism of Stoichiometric Composition in Dual-Beam Vacuum Evaporation Method
• Enhanced Growth Mechanism in Lateral Solid-Phase Epitaxy of Si Films Simultaneously Doped with P and Ge Atoms
• Epitaxial Growth of SrTiO_3 Films on Si (100) Substrates Using a Focused Electron Beam Evaporation Method
• Stress-Induced Anomalous Growth in Lateral Solid-Phase Epitaxy of Ge-Incorporated Si Films
• Preparation and Characterization of PZT Thin Films on CeO_2(111)/Si(111) Structures
• Formation of He_2 Molecule in the Afterglow of Pulsed Discharge
• X-Ray and Photolumineseence Characterization of a Strain-Free GaAs-on-Si Structure Formed by Anrnealing under Ultrahigh Pressure
• Formation of Conductive SrVO_3 Films on Si Substrates
• Proposal of a Novel Ferroelectric-Gate Field Effect Transistor with Separated Functions for Data read-Out and Data Storage
• Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory Weights
• Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer
• Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication
• Electrical Properties of Ferroelectric Gate HEMT Structures
• Roles of Buffer Layers in Epitaxial Growth of SrTiO_3 Films on Silicon Substrates

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