Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-02-20
著者
-
ANDO KOJI
Department of Surgery and Science, Graduate School of Medical Sciences, Kyushu University
-
KOMA Atsushi
Department of Chemistry, The University of Tokyo
-
SATO Yasuhiro
Department of Applied Physics, Hokkaido University
-
ASANO Tanemasa
Graduate School of Information Science and Electrical Engineering, Kyushu University
-
Asano Tanemasa
Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
FURUKAWA Seijiro
Graduate School of Science and Engineering, Tokyo Institute of technology
-
ISHIWARA Hiroshi
Graduate School of Science
-
SAIKI Koihiro
Department of Chemistry, The University of Tokyo
-
Saiki Koihiro
Department Of Chemistry The University Of Tokyo
-
Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
-
Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
-
Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
-
Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
-
FURUKAWA Seigo
Department of Electronics, Nippondenso Technical College
-
Furukawa S
Kyushu Inst. Technology Fukuoka Jpn
-
Koma Atsushi
Department Of Applied Physics University Of Tokyo
-
Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
Ando Koji
Department Of Applied Chemistry Muroran Institute Of Technology
-
Ando Koji
Department Of Chemistry The University Of Tokyo
-
Sato Yasuhiro
Department Of Chemistry The University Of Tokyo
-
Ando Koji
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
関連論文
- サルベージ温熱化学療法が奏功した根治的化学放射線療法後再発食道癌の一例
- Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure
- Femtosecond Optical Pulse Compressor Using CS_2 Liquid-Core Fiber with Negative Delayed Nonlinear Response
- Study on Ultrafast Dynamic Behaviors of Different Nonlinear Refractive Index Components in CS_2 Using a Femtosecond Interferometer
- Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Long-term efficacy of imatinib in a practical setting is correlated with imatinib trough concentration that is influenced by body size : a report by the Nagasaki CML Study Group
- Imatinib Provides Durable Molecular and Cytogenetic Responses in a Practical Setting for Both Newly Diagnosed and Previously Treated Chronic Myelogenous Leukemia : A Study in Nagasaki Prefecture, Japan
- Dynamic and Static Disorder of Alkali Halide Solid Solutions studied by Temperature-dependent Extended X-Ray-Absorption Fine Structure
- Scanning Tunneling Microscope Observation of the Metal-Adsorbed Layered Semiconductor Surfaces
- Heteroepitaxial Growth of Layered GaSe Films on GaAs(001) Surfaces
- Heteroepitaxy of Layered Semiconductor GaSe on a GaAs (111) B Surface
- Contactless Measurement of Semiconductor Mobility Conductivity and Carrier Concentration : B-3: CRYSTAL GROWTH AND DEFECTS
- Theoretical Considerations on Lateral Spread of Implanted Ions
- High expression of BUBR1 is one of the factors for inducing DNA aneuploidy and progression in gastric cancer
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- Single Crystalline Silicide Formation
- Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
- Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
- Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
- Electrical Characteristics of Neuron Pulse Oscillation Circuits Using Complementary Unijunction Transistors and MOSFETs
- Microwave pyrolysis of cellulosic materials for the production of anhydrosugars
- Rapid Microwave Pyrolysis of Wood
- A novel method to fabricate a molecular quantum structure: Selective growth of C-60 on layered material heterostructures
- X-Ray Photoemission Spectroscopy Study for the Flat YBa_2Cu_3O_y Single-Crystal Surface Prepared by Chemical Etching and O_2 Annealing
- Characterization of Epitaxial Films of Layered Materials Using Moire Images of Scanning Tunneling Microscope
- Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
- Minimally Invasive Valve Surgery with Single Access in 10 Patients
- Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Photoassisted Electrochemical Deposition of Copper from a Bathocuproin Complex
- Electrical Properties of LiF/Ag(001) Heterostructure
- Effect of Size and Aspect Ratio of a Vessel on Formation of Air-Water Hollow Profile under Microgravity
- Formation Map of Air-Liquid Hollow Profile under Microgravity
- Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
- Fabrication of GaAs quantum dots on a bilayer-GaSe terminated Si(111) substrate
- Nanostructure fabrication using selective growth on nanosize patterns drawn by a scanning probe microscope
- Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface
- Oriented Growth of Location-Controlled Si Crystal Grains Using Ni Nano-Imprint and Excimer Laser Annealing
- Total Synthesis of(+)-Myriocin and(-)-Sphingofungin E from Aldohexoses Using Overman Rearrangement as the Key Reaction
- Properties of Ferroelectric BaMgF_4 on Si(100), (110) and (111) Substrates Obtained by Post-Deposition Rapid Thermal Annealing
- Substrate Orientation Dependence of the Properties of Metal-Ferroelectric BaMgF_4-Silicon Capacitors by Post-Deposition Annealing
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
- Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
- Impact of Perioperative Peripheral Blood Values on Postoperative Complications After Esophageal Surgery
- A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
- Molecular Beam Epitaxy of SnSe_2 : Chemistry and Electronic Properties of Interfaces
- RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials
- Effect of Centrifugal Force on Bubble Breakage Time under Microgravity
- Formation of Ohmic Contacts to n-GaAs by Solid Phase Epitaxy of Evaporated and Ion Implanted Ge Films
- Improvement of the Interface Properties of Fluoride/GaAs(100) Structures by Postgrowth Annealing : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Epitaxial Growth of Ge Films onto CaF_2/Si Structures
- Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates
- SF-032-5 Aberrant expression of BUBR1 and p53 mutually associated with chromosomal instability in colorectal cancer
- Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
- Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation
- Electrical Properties of Ferroelectric Gate HEMT Structures
- Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures
- Crystalline Quality and Electrical Properties of PbZr_xTi_O_3 Thin Films Prepared on SrTiO_3-Covered Si Substrates
- Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
- Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
- Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Electrical Properties of Gallium Fluoride(GaF_3)/GaAs Interface with and without Sulfur Treatment
- Growth and Crystallinity of Ferroelectric BaMgF_4 Films on (111)-Oriented Pt Films
- Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation
- Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures
- Recrystallization of Silicon-on-Insulator Structures by Sinusoidally-Scanned Electron Beams
- Formation of Shallow p^+n Junctions by B-Ion Implantation in Si substrates with Amorphous Layers
- Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
- Epitaxial Silicide Films for Integrated Circuits and Future Devices : A-1: OPENING
- Solid Phase Epitaxy of Highly-Doped Si: B Films Deposited on Si(100) Substrates
- Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy
- Scannning Electron Beam Annealing of P-Ion-Implanted Si(100) and (111) Substrates
- Low-Energy Electron Energy Loss Spectroseopy on CaF_2(111) Surfaces
- Adsorption of Oxygen on Electron-Bombarded CaF_2(111) Surfaces
- Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures : A-6: SILICON CRYSTALS
- Secondary Resistance of Extra-gastrointestinal Stromal Tumors to Imatinib Mesylate : Report of a Case
- Preparation of Yb-Ba-Cu-O Superconducting Films Using an Arc Discharge Evaporation Method
- Clinical aspect and molecular mechanism of DNA aneuploidy in gastric cancers
- Patterns and time of recurrence after complete resection of esophageal cancer
- Study on Ultrafast Dynamic Behaviors of Different Nonlinear Refractive Index Components in CS 2 Using a Femtosecond Interferometer