Epitaxial Growth of Ge Films onto CaF_2/Si Structures
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概要
- 論文の詳細を見る
Heteroepitaxial Ge/insulator/Si structures have been prepared by vacuum evaporation of CaF_2 and Ge onto heated (111) and (100) oriented Si substrates. CaF_2 films with high crystalline perfection and smooth surface were formed on (111) and (100)Si at substrate temperatures of 800℃ and 600℃, respectively. Ge films were deposited onto the CaF_2/Si structures at 400℃ to 600℃. Higher Ge deposition temperature resulted in increased Ge surface roughness but improved Ge crystalline quality. Both the crystalline quality and the electrical properties of the Ge films on CaF_2/Si(100) structures were superior to those of the Ge films on CaF_2/Si(111) structures.
- 社団法人応用物理学会の論文
- 1982-10-20
著者
-
ISHIWARA Hiroshi
Graduate School of Science
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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