Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution
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概要
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We developed a method to dope phosphorus into 4H-SiC by irradiating excimer laser light to 4H-SiC immersed in phosphoric acid solution. A KrF excimer laser was used. The surface is slightly ablated by the laser irradiation. However, no amorphous layer is generated near the surface. Phosphorous is introduced at a concentration of over 10^{20} cm<sup>-3</sup>near the crystal surface. The laser irradiation in phosphoric acid solution significantly improves the ohmic contact characteristic between metal and 4H-SiC. Hall effect measurement shows that the irradiation produces an n-type layer at the surface whose sheet carrier concentration is 2.25\times 10^{12} cm<sup>-2</sup>. In addition, we produce a pn junction by irradiating p-type 4H-SiC. The pn junction shows a rectifying characteristic whose on/off ratio is over 8 decades and ideality factor is 1.06.
- 2013-06-25
著者
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Ikeda Akihiro
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Ikenoue Hiroshi
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Nishi Koji
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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