Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution (Special Issue : Microprocesses and Nanotechnology)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Ikeda Akihiro
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Ikenoue Hiroshi
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Nishi Koji
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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- Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution (Special Issue : Microprocesses and Nanotechnology)