Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates
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概要
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Growth conditions and structures of vacuum-evaporated heteroepitaxial CaF_2, SrF_2 and BaF_2 films on (111) and (100) oriented Si substrates have been investigated. Single crystal CaF_2 films are grown on both Si(111) and (100) substrates at temperatures of 600-800℃ and 500-600℃, respectively. CaF_2 films on Si(111) have crystal orientations rotated 180° about the normal to the substrate surface. SrF_2 and BaF_2 films of good crystalline quality are grown on Si(111) at temperatures around 6O0℃, but are composed of two types of crystallites which have orientations either idential to those of the substrate or rotated 180° on the substrate surface about the surface normal. SrF_2 and BaF_2 films grown on Si(100) contain (111) oriented crystallites, and, in an extreme case, completely (111) oriented BaF_2 films were grown on Si(100).
- 社団法人応用物理学会の論文
- 1983-10-20
著者
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Asano Tanemasa
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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ISHIWARA Hiroshi
Graduate School of Science
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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KAIFU Noriyuki
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Kaifu Noriyuki
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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ISHIWARA Hiroshi
Graduate School of Science and Engineering, Tokyo Institute of Technology
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