Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
A novel doping technique in solid phase epitaxy of Si is presented, in which impurity ions are implanted in deposited-amorphous films and electrically activated during epitaxial growth of the films. It has been found in boron-implanted samples that the electrical activity is very high at annealing temperatures higher than 600℃ and that the ions do not penetrate deeply by the channeling effect nor redistribute by thermal diffusion. An anomalous result that the sheet carrier concentration is higher than the implanted boron dose has also been found and its origin is phenomenologically investigated.
- 社団法人応用物理学会の論文
- 1982-09-20
著者
-
ISHIWARA Hiroshi
Graduate School of Science
-
Naruke Kiyomi
Graduate School Of Science And Engineering Tokyo Institute Of Technology:(present Address) Toshiba C
-
Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
関連論文
- Contactless Measurement of Semiconductor Mobility Conductivity and Carrier Concentration : B-3: CRYSTAL GROWTH AND DEFECTS
- Theoretical Considerations on Lateral Spread of Implanted Ions
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- Single Crystalline Silicide Formation
- Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
- Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
- Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
- A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
- Formation of Ohmic Contacts to n-GaAs by Solid Phase Epitaxy of Evaporated and Ion Implanted Ge Films
- Improvement of the Interface Properties of Fluoride/GaAs(100) Structures by Postgrowth Annealing : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Epitaxial Growth of Ge Films onto CaF_2/Si Structures
- Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates
- Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
- Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation
- Recrystallization of Silicon-on-Insulator Structures by Sinusoidally-Scanned Electron Beams
- Formation of Shallow p^+n Junctions by B-Ion Implantation in Si substrates with Amorphous Layers
- Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
- Formation of Uniform Solid-Phase Epitaxial CoSi_2 Films by Patterning Method
- Epitaxial Silicide Films for Integrated Circuits and Future Devices : A-1: OPENING
- Solid Phase Epitaxy of Highly-Doped Si: B Films Deposited on Si(100) Substrates
- Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy
- Photoluminescence from GaAs/CaF_2/Si Structure Grown by Electron-Beam Exposure (EBE) and Epitaxy Method
- Scannning Electron Beam Annealing of P-Ion-Implanted Si(100) and (111) Substrates
- Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures : A-6: SILICON CRYSTALS
- Preparation of Yb-Ba-Cu-O Superconducting Films Using an Arc Discharge Evaporation Method
- Study on Saturation Power in SAW Amplifiers
- Heteroepitaxial Growth of GaAs Films on CaF2/Si(511) Structures Prepared with Rapid Thermal Annealing