Formation of Shallow p^+n Junctions by B-Ion Implantation in Si substrates with Amorphous Layers
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概要
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The optimum conditions to form shallow p^+n junctions by B-ion implantation in Si substrates were investigated. In order to avoid a deep penetration of the B ions, they were implanted in amorphous Si(a-Si) layers on Si(100) substrates.These substrates were produced by either the pre-implantation of Si ions or the vacuum-deposition of Si and were annealed in an electric furnace at 650℃ or by a scanning electron beam (EB) It was found that the defects existing near theoriginal amorphous-crystalline interface were not annealed out by low-temperature furnace annealing or EB annealingand that the reverse current of the pn diode drastically increased when the interface was located in the depletion layer ofthe junction. Shallow p^+n junctions with good electrical properties were obtained when the thicknesses of the deposited a-Si films were a little thinner than the junction depths.
- 社団法人応用物理学会の論文
- 1985-05-20
著者
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ISHIWARA Hiroshi
Graduate School of Science
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Horita Susumu
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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