Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation

概要

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It has been demonstrated that a solid phase epitaxial growth in the Si(100)/Pd/Si(amorphous)system can be controlled by C^+ ions introduced by the implantation technique. These were implanted into Pd or St(a) films at energies ranging from 50 to 160 keV after film deposition. The implantation doses were adjusted so that the maximum concentration of C^+ tons ranged from 0.25 to 4 at. %. The growth behavior was measured by the MeV He^+ Rutherford backscattering and channeling techniques. The results show that Pd atoms in the film move towards the surfaceand they are concentrated near the average projected range of C^+ ions in the Si(a) film. They alsoshow the radiation damage produced by the implantation does not affect these phenomena. Theoptimum conditions for obtaining the best epitaxial layer have been investigated with regard toparameters such as film thickness, ton species, implantation dose and energy, annealin.g time andtemperature, and so on. The best epitaxial layer was obtained when C^+ tons were implanted nearthe interface between the St(a) and Pd films, though the layer still contained residual Pd atoms of 1 to 2 at. %.
社団法人応用物理学会の論文
1980-05-05