Heteroepitaxial Growth of GaAs Films on CaF2/Si(511) Structures Prepared with Rapid Thermal Annealing
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概要
- 論文の詳細を見る
Heteroepitaxial growth of CaF2 films on (511)Si and GaAs films on CaF2 /Si(511) structures is investigated. CaF2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measurements and replica transmission electron microscopy show that CaF2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 s after the growth at 550°C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF2/Si(511) structures. Differences in crystalline defects between GaAs films grown on (511) substrates and those on (100) substrates are discussed based on results obtained from crosssectional transmission electron microscopy.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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Asano Tanemasa
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Asano Tanemasa
Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820
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Furukawa Seijiro
Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227
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