Electrical Properties of Gallium Fluoride(GaF_3)/GaAs Interface with and without Sulfur Treatment
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概要
- 論文の詳細を見る
The electrical properties of gallium fluoride (GaF_3) films deposited on GaAs are investigated. It has been found that deposited GaF_3 films are good insulators with a dielectric constant of 6.6 and a resistivity of 2×10^<13> Ω・cm. It has also been found that the interface properties are good enough to generate inversion carriers either when a GaF_3 film is deposited onto a homoepitaxial GaAs layer without breaking the vacuum or when the film is deposited on a sulfurtreated surface.
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Kim Kwang
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology:(present Ad
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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RICARD Herve
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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AIZAWA Kouji
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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ISHIWARA Hiroshi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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RICARD Herve
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ricard Herve
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Aizawa Koji
Department of Physiology, Tokyo Medical University
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