Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication
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概要
- 論文の詳細を見る
Growth characteristics and device application of the selective surface doping method in lateral solid phase epitaxy (LSPE) are presented. In this method, P atoms are incorporated near the surface of amorphous Si (a-Si) films to enhance the L-SPE growth and the underlying undoped layers are used for device fabrication. First, the growth characteristics are investigated by changing thicknesses of the a-Si film and the P-doped layer, and a quantitative model to explain the experimental results is presented. Then, it is shown that redistribution of the P atoms during L-SPE annealing is negligibly small, and the P-doped layer is selectively etched by combination of a wet chemical etchant and subsequent reactive ion etching. Finally, metal-oxide-semiconductor field-effect transistors (MOSFETs) with upper and lower gate electrodes are fabricated in the undoped layer and the electrical properties of both the upper and lower channel FETs are investigated.
- 社団法人応用物理学会の論文
- 1992-06-15
著者
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ISHIWARA Hiroshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Fukao Kazuichi
Precision And Intelligence Laboratory Tokyo Institute Of Technology:(present Address):kanagawa Works
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DAN Toru
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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DAN Toru
Precision and Intelligence Laboratory, Tokyo Institute of Technology:(Present address):ULSI Center, Sanyo Electric Co.
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FUKAO Kazuichi
Precision and Intelligence Laboratory, Tokyo Institute of Technology:(Present address):Kanagawa Works, Hitachi, Ltd.
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