Epitaxial Growth of SrTiO_3 Films on Si (100) Substrates Using a Focused Electron Beam Evaporation Method
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概要
- 論文の詳細を見る
A novel epitaxial growth method of SrTiO_3 films on Si (100) substrates is presented in which, in order to reduce the surface oxide layers of the substrates, thin Sr layers are deposited prior to deposition of SrTiO_3 films. It has been shown that the film composition becomes nearly stoichiometric when single-crystalline SrTiO_3 sources are evaporated by a focused electron beam and that SrTiO_3 films grow epitaxially on Si (100) substrates under the optimum conditions of the Sr layer thickness, deposition temperature, and annealing temperature.
- 社団法人応用物理学会の論文
- 1991-08-01
著者
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Mori Hiroyuki
Precision And Intelligence Laboratory Tokyo Institute Of Technology:central Research Laboratory Hita
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