Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-02-01

著者

• TOKUMITSU Eisuke

  Precision and Intelligence Laboratory, Tokyo Institute of Technology

• ISHIWARA Hiroshi

  Frontier Collaborative Research Center, Tokyo Institute of Technology

• Ishiwara Hiroshi

  Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Department Of Applied Electronics Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering

• Ishiwara Hiroshi

  Precision And Intelligence Laboratory Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Precision & Intelligence Laboratory Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc

• Ishiwara H

  Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering

• Tokumitsu E

  Tokyo Inst. Technol. Yokohama Jpn

• Tokumitsu E

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Tokumitsu Eisuke

  Precision And Intelligence Laboratory Tokyo Institute Of Technology

• Kuraoka Takuya

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• IMADA Shogo

  Frontier Collaborative Research Center, Tokyo Institute of Technology

• KURAOKA Takuya

  Frontier Collaborative Research Center, Tokyo Institute of Technology

• Ishiwara Hiroshi

  Frontier Collaborative Research Center Tokyo Insitute Of Technology

• Imada Shogo

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Tokumitsu Eisuke

  Precision & Intelligence Laboratory, Tokyo Institute of Technology,

関連論文

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• Characterization of Sol-gel Derived Bi_La_xTi_3O_ Films
• Theoretical Considerations on Lateral Spread of Implanted Ions
• Formation and Characterization of Epitaxial TiO_2 and BaTiO_3/TiO_2 Films on Si Substrate
• Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
• Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
• Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
• Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
• Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
• Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
• Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
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