Studies on Formation Characteristics and Mechanism of SiC on Si and Metal-Silicides by Using Ion Backscattering Techniques
スポンサーリンク
概要
- 論文の詳細を見る
The formation characteristics and mechanism of SiC on Si and metal silicides have been studied by backscattering and channeling effect techniques. It is concluded that whereas the composition ratios of SiC layer are close to unity for all cases, the growth rates are different for different cases. The qualities of SiC layers have also been evaluated by reflection electron diffraction analysis as well as by channeling effect technique. The results indicate that SiC layer on Si is single crystal in nature, SiC layer on TiSi_2 has a preferential orientation and SiC layer on NiSi_2 is amorphous or composed of polycrystals.
- 社団法人応用物理学会の論文
- 1979-04-05
著者
-
Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
-
Furukawa Seijiro
Department Of Applied Electronics Tokyo Institute Of Technology
-
Furukawa Seijiro
Department Of Applied Electronics Graduate School Of Science And Technology
-
NAGATOMO Masao
Department of Applied Electronics, Tokyo Institute of Technology
-
Nagatomo Masao
Department Of Applied Electronics Tokyo Institute Of Technology
-
ISHIWARA Hiroshi
Department of Applied Electronics, Tokyo Institute of Technology
-
Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
関連論文
- Theoretical Considerations on Lateral Spread of Implanted Ions
- An Amorphous-Silicon Film Usable at High-Temperature : Annealing Properties of a New Fluorinated Amorphous-Silicon : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- A Comparison of the Thermal Stabilities of Fluorinated and Hydrogenated Amorphous-Silicons
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
- Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
- Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
- Hall Mobility of Low-Temperature-Deposited Polysilicon Films by Catalytic Chemical Vapor Deposition Method
- Photo-Conductive, Low Impurity-Diffusive, Heat-Resisting a-Si Formed by Glow-Discharged Decomposition of SiF_2 and H_2 Mixture : C-5: SOLAR CELLS
- Theoretical Considerations in Lateral Damage Distribution Formed by Ion-Implantation
- Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Study on Impurity Diffusion in Glow-Discharged Amorphous Silicon
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Control of Epitaxial Relation of GaAs Film on Fluoride/Si(111) Structure
- Effect of Substrate Off-Orientation on GaAs/CaF_2/Si(111) Structure with Rotational Twin
- Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method
- Preparation and Electrical Properties of An Amorphous SiC/Crystalline Si P^+n Heterostructure
- Properties of Excited Surface-Wave Domains in CdS
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
- Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
- Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface
- Study on Efficiency of Piezoelectric Semiconductor SAW Convolver
- Study of Epitaxial Growth of Rotational-Twin-Free CaF_2 Films on Si(111)
- Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
- Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
- Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Study on Measurement of Carrier Effective Lifetime in Furnace and Laser Annealed Diodes
- The Lattice Location of Phosphorus Atoms Implanted into Silicon
- Fabrication and Characterization of 1 k-bit 1T2C-Type Ferroelectric Memory Cell Array
- Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
- Mass Dependence of Critical Amorphizing Dose in Ion Implantation
- Studies on Formation Characteristics and Mechanism of SiC on Si and Metal-Silicides by Using Ion Backscattering Techniques
- The Loss Characteristics of a Semiconductor Travelling Wave Amplifier
- Study of Shallow p^+n Junction Formation Using SiGe/Si System
- Experimental Simulation on the Beam Heating Effects in Ion Implantation Techniques
- Measurement of Energy Propagation Direction of Acoustoelectric Domains in Anisotropic Crystal
- Drain Current Characteristics of Ferroelectric Gate-All-Around Si Nanowire Transistors Based on Drift/Diffusion Transport Theory
- Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal-Oxide-Semiconductor Diodes with Yb Donor Layer
- Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
- Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO
- Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator