Drain Current Characteristics of Ferroelectric Gate-All-Around Si Nanowire Transistors Based on Drift/Diffusion Transport Theory
スポンサーリンク
概要
著者
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Ohmi Shun-ichiro
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ibata Masakazu
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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