Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface

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概要

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• The ion channeling effect in hetero-epitaxial structures is considered theoretically. Four dechanneling factors at the film-substrate interface are discussed, i.e., (l) a transition layer, (2) lattice imperfection due to the mismatch of lattice parameters, (3) discontinuity of atomic rows, and (4) deformation of the potential distribution inside a channel. These conditions are then applied to practical silicide-on-silicon structures, the metal elements and composition ratios suitable for epitaxial growth on Si substrates being determined from the lattice matching conditions, and the behavior of channeled ions at the interface being predicted using the dechanneling factors (3) and (4). It is concluded that the dechanneling probability is lowest for NiSi_2 and CoSi_2 on Si structures, and that a pronounced flux peaking effect is expected to be caused by the host atoms in a CrSi_2 on Si structure.

• 社団法人応用物理学会の論文
• 1981-05-05

著者

• ISHIWARA Hiroshi

  Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology

• Saitoh Shuichi

  Department Of Applied Electronics Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Department Of Applied Electronics Tokyo Institute Of Technology

• Hikosaka Kohki

  Department Of Applied Electronics Tokyo Institute Of Technology:(present Address) Fujitsu Laboratori

• Ishiwara Hiroshi

  Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

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