Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal-Oxide-Semiconductor Diodes with Yb Donor Layer
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2012-03-25
著者
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Ohmi Shun-ichiro
Department Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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SONG Younguk
Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Song Younguk
Department Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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