Ohmi Shun-ichiro | Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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概要
- 同名の論文著者
- Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyoの論文著者
関連著者
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Liao Min
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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OHMI Shun-ichiro
Tokyo Institute of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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IWAI Hiroshi
Frontier Research Center, Tokyo Institute of Technology
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FURUKAWA Seijiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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Ohmi Shun‐ichiro
Tokyo Inst. Technol. Yokohama Jpn
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Ohmi Shunichiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Department Of Information Processing Interdisciplinary Graduate School Of Science And Engineering To
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TONOTANI Junichi
Corporate Manufacturing Engineering Center, Toshiba Corporation
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Tonotani J
Corporate Manufacturing Engineering Center Toshiba Corporation
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Tonotani Junichi
Corporate Manufacturing Engineering Center Toshiba Corporation
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Tsutsui Kazuo
Department Of Applied Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tech
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Tsutsui Kazuo
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Furukawa Seijiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Furukawa Seijiro
Department Of Applied Electronics Graduate School Of Science And Technology
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Ishiwara Hiroshi
Konkuk Univ.
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Ohmi Shun-ichiro
Department Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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SONG Younguk
Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Song Younguk
Department Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Liao Min
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Sano Takahiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ishiwara Hiroshi
Department of Physics, Division of Quantum Phases and Devices, Konkuk University, Seoul 143-701, Korea
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Kamino Kousuke
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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ISHIWARA Hiroshi
Department of Physics, Division of Quantum Phases and Devices, Konkuk University
著作論文
- Dry Etching of Cr_2O_3/Cr Stacked Film during Resist Ashing by Oxygen Plasma
- Study of Epitaxial Growth of Rotational-Twin-Free CaF_2 Films on Si(111)
- Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
- Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal-Oxide-Semiconductor Diodes with Yb Donor Layer
- Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
- Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO
- HfOxNy Thin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering
- Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator