Study of Epitaxial Growth of Rotational-Twin-Free CaF_2 Films on Si(111)
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概要
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It was shown that the 2-step growth method is very effective for growing rotational-twin-free CaF_2 films on Si(111) which is called type-A. Experimental study of the effect of thickness of the first layer in the 2-step growth method revealed the thickness of a first grown layer more than about 8 monolayers (ML) was necessary to obtain uniform type-A CaF_2 films, and that mixed or uniform type-B CaF_2 if it is less than 4 ML. A growth model in which the 1st layer must be rotated around the normal axis of Si(111) during the substrate temperature elevation just before the 2nd step growth if the 1st layer is less than 4 ML is proposed.
- 社団法人応用物理学会の論文
- 1994-02-15
著者
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FURUKAWA Seijiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Tsutsui Kazuo
Department Of Applied Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tech
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Tsutsui Kazuo
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Furukawa Seijiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Furukawa Seijiro
Department Of Applied Electronics Graduate School Of Science And Technology
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