Epitaxial Growth of SrF_2 on ZnSe(100) Epitaxial Films
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概要
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Epitaxial SrF_2 films were grown on ZnSe(100) epitaxial substrates using molecular beam epitaxy (MBE), and their crystallinity dependent on growth temperature was characterized using X-ray diffraction and Rutherford backscattering spectroscopy. SrF_2 film with good crystallinity was obtained at the growth temperature of 250℃.
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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Tsutsui Kazuo
Department Of Applied Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tech
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Tsutsui Kazuo
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Technology Tokyo
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Sarinanto Mohammad
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Technology Tokyo
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- Effects of Electron Beam Exposure Conditions on the Surface Modification of CaF_2 (111) for Heteroepitaxy of GaAs/CaF_2 Structure
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- Structure of Lattice-Matched Ca_xSr_F_2 Epilayers on GaAs(111)B Surface Analyzed by the X-Ray Standing-Wave Method : Surfaces, Interfaces and Films
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