Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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FURUKAWA Seijiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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TSUTSUI Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Tsutsui K
Sony Corp. Tokyo Jpn
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FURUKAWA Seigo
Department of Electronics, Nippondenso Technical College
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Furukawa S
Kyushu Inst. Technology Fukuoka Jpn
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ONO Atsuki
Department of Applied Electronics, Interdisciplinary Graduate School of Science & Engineering, Tokyo
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TSUTSUI Kazuo
Department of Applied Electronics, Interdisciplinary Graduate School of Science & Engineering, Tokyo
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ISHIYAMA Osamu
Department of Applied Electronics, Graduate School of Science & Engineering, Tokyo Institute of Tech
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Ono A
Toshiba Corp. Yokohama
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Tsutsui Kazuo
Department Of Applied Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tech
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Ono Atsuki
Department Of Applied Electronics Interdisciplinary Graduate School Of Science & Engineering Tok
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Furukawa Seijiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Furukawa Seijiro
Department Of Applied Electronics Graduate School Of Science And Technology
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