TSUTSUI Kazuo | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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概要
- TSUTSUI Kazuoの詳細を見る
- 同名の論文著者
- Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technologyの論文著者
関連著者
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TSUTSUI Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Tsutsui K
Sony Corp. Tokyo Jpn
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Kawasaki K
Tokyo Inst. Technol. Yokohama Jpn
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Kawasaki Koji
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kawasaki Koji
Department Of Preventive And Community Dentistry Osaka Dental University
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Kawasaki Koji
Department Of Electric And Electronic Engineering University Of Tokushima
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FURUKAWA Seigo
Department of Electronics, Nippondenso Technical College
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Furukawa S
Kyushu Inst. Technology Fukuoka Jpn
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IWAI Hiroshi
Frontier Research Center, Tokyo Institute of Technology
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Sokolov Nikolai
Ioffe Physico-technical Institute Russian Academy Of Sciences
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IZUMI Akira
Japan Advanced Institute of Science and Technology (JAIST)
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FURUKAWA Seijiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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Ohmi Shun-ichiro
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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TAKESHITA Jun
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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UEJIMA Kazuya
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Uejima Kazuya
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Takeshita J
Tokyo Inst. Technol. Tokyo Jpn
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Izumi A
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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TSUTSUI Kazuo
Department of Applied Electronics, Interdisciplinary Graduate School of Science & Engineering, Tokyo
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Tsutsui Kazuo
Department Of Applied Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tech
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Tsutsui Kazuo
Dept. Of Electronics And Applied Physics Tokyo Institute Of Technology
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Furukawa Seijiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Furukawa Seijiro
Department Of Applied Electronics Graduate School Of Science And Technology
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ASANO Tanemasa
Graduate School of Information Science and Electrical Engineering, Kyushu University
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Asano Tanemasa
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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IZUMI Akira
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)
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FURUKAWA Seijiro
Graduate School of Science and Engineering, Tokyo Institute of technology
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ISHIWARA Hiroshi
Graduate School of Science
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TSUTSUI Kazuo
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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MOCHIZUKI Marie
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Mochizuki Marie
Technology Development Division Victor Company Of Japan Ltd.
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Iwai Hiroshi
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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ONO Atsuki
Department of Applied Electronics, Interdisciplinary Graduate School of Science & Engineering, Tokyo
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Ono A
Toshiba Corp. Yokohama
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Tsutsui Kazuo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Mizukami Hiroyuki
Department Of Applied Electronics Tokyo Institute Of Technology:material Laboratory Research Divisio
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Ono Atsuki
Department Of Applied Electronics Interdisciplinary Graduate School Of Science & Engineering Tok
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MATSUBARA Noriyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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KUSHIDA Yusuke
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Kushida Yusuke
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Matsubara N
Nippon Concrete Industries Co. Ltd.
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Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yamaguchi M
Department Of Physics Yokohama National University
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Lee Hee
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Lee Hee
Department Of Eecs Korea Advanced Institute Of Science And Technology
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Lee Hee
Department Of Electrical Engineering And Computer Science Kaist
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TSUTSUI Kazuo
Dept. of Electronics and Applied Physics, Tokyo Institute of Technology
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HU Evelyn
Department of Electrical and Computer Engineering, University of California
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Taguchi Junichi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kaneko Yoshiyuki
Central Research Laboratory Hitachi Lid.
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Yamaguchi Masafumi
Ntt Ibaraki Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation
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Yamaguchi Masafumi
Ntt Electrical Communications Laboratories
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KIM Yongshik
Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology
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KURIYAMA Atsushi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Hu Evelyn
Department Of Electrical And Computer Engineering University Of California
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MIZUKAMI Hiroyuki
Department of Applied Electronics, Tokyo Institute of Technology
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ISHIYAMA Osamu
Department of Applied Electronics, Graduate School of Science & Engineering, Tokyo Institute of Tech
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MIZUKAMI Hiroyuki
Dept. of Applied Electronics, Tokyo Institute of Technology
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ISHIYAMA Osamu
Dept. of Applied Electronics, Tokyo Institute of Technology
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NAKAMURA Satoshi
Dept. of Applied Electronics, Tokyo Institute of Technology
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FURUKAWA Seijiro
Dept. of Applied Electronics, Tokyo Institute of Technology
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Kaneko Y
Hewlett-packard Laboratories
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YAMAMOTO Hiroyuki
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Yamaguchi M
Nagoya Univ. Nagoya Jpn
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Hu E
Univ. California Ca Usa
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WILKINSON Chris
Department of Electronics and Electrical Engineering, University of Glasgow
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kim Yongshik
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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TSUTSUI Ken
Central Research Laboratory, Hitachi, Lid.
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YAMAGUCHI Muneaki
Central Research Laboratory, Hitachi, Ltd.,
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Tsutsui Ken
Central Research Laboratory Hitachi Lid.
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IZUMI Akira
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Wilkinson Chris
Department Of Electronics And Electrical Engineering University Of Glasgow
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Yamamoto Hiroyuki
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Nakamura Satoshi
Dept. Of Applied Electronics Tokyo Institute Of Technology
著作論文
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Single-Electron Devices Formed by Self-Ordering Metal Nanodroplet Arrays on Epitaxial CaF_2 Film
- Multitunneling Junction of Metal Droplets Formed on CaF_2 Step Edges in a Self-Assembling Manner
- Multi-Tunnelling Junctions of Metal Droplets Formed on CaF2 Stepedges by Self-Assembling Manner
- Artificial Control of Dot Sites for Ga Droplet Arrays on CaF_2 Films by Surface Steps and Electron Beam Modifications ( Quantum Dot Structures)
- Site Control of Ga Droplet Array on CaF_2 by Surface Modification Using a Focused Electron Beam
- Site Control of Metal Droplet Formation on CaF_2 Surface Using a Focused Electron Beam
- Space-Charge-Limited Currents in La_2O_3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing
- Effect of Post-Metallization Annealing on Electrical Characteristics of La_2O_3 Gate Thin Films
- Control of Epitaxial Relation of GaAs Film on Fluoride/Si(111) Structure
- Effect of Substrate Off-Orientation on GaAs/CaF_2/Si(111) Structure with Rotational Twin
- Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method
- Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy
- Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy_2O_3/Si(100) Diode Characteristics
- Reactive Ion Etched II-VI Quantum Dots: Dependence of Etched Profile on Pattern Geometry
- Two-Dimensional Contact-Type Image Sensor Using Amorphous Silicon Photo-Transistor
- Heteroepitaxial Growth of CdF_2 Layers on CaF_2/Si(111) by Molecular Beam Epitaxy
- CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
- CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)