Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-03-20

著者

• TSUTSUI Kazuo

  Dept. of Electronics and Applied Physics, Tokyo Institute of Technology

• TSUTSUI Kazuo

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• Tsutsui K

  Sony Corp. Tokyo Jpn

• FURUKAWA Seigo

  Department of Electronics, Nippondenso Technical College

• Furukawa S

  Kyushu Inst. Technology Fukuoka Jpn

• MIZUKAMI Hiroyuki

  Dept. of Applied Electronics, Tokyo Institute of Technology

• ISHIYAMA Osamu

  Dept. of Applied Electronics, Tokyo Institute of Technology

• NAKAMURA Satoshi

  Dept. of Applied Electronics, Tokyo Institute of Technology

• FURUKAWA Seijiro

  Dept. of Applied Electronics, Tokyo Institute of Technology

• Mizukami Hiroyuki

  Department Of Applied Electronics Tokyo Institute Of Technology:material Laboratory Research Divisio

• Tsutsui Kazuo

  Dept. Of Electronics And Applied Physics Tokyo Institute Of Technology

• Nakamura Satoshi

  Dept. Of Applied Electronics Tokyo Institute Of Technology

関連論文

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