FURUKAWA Seigo | Department of Electronics, Nippondenso Technical College
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概要
関連著者
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FURUKAWA Seigo
Department of Electronics, Nippondenso Technical College
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Furukawa S
Kyushu Inst. Technology Fukuoka Jpn
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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FURUKAWA Seijiro
Graduate School of Science and Engineering, Tokyo Institute of technology
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ISHIWARA Hiroshi
Graduate School of Science
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Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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ASANO Tanemasa
Graduate School of Information Science and Electrical Engineering, Kyushu University
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Asano Tanemasa
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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FURUKAWA Seijiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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TSUTSUI Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Tsutsui K
Sony Corp. Tokyo Jpn
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Furukawa Seijiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Furukawa Seijiro
Department Of Applied Electronics Graduate School Of Science And Technology
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Yamamoto H
Sharp Corp. Nara Jpn
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Yamamoto H
College Of Science And Technology Nihon University
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Lee Hee
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Lee Hee
Department Of Eecs Korea Advanced Institute Of Science And Technology
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Lee Hee
Department Of Electrical Engineering And Computer Science Kaist
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野村 卓志
静岡大学電子工学研究所
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YAMAMOTO Hiroshi
Department of Macromolecular Science, Graduate School of Science, Osaka University
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Yasuda T
Joint Research Center For Atom Technology (jrcat)
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Yasuda Tetsuji
Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R
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ISHIWARA Hiroshi
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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FURUKAWA Shoji
Department of Computer Science and Electronics, Kyushu Institute of Technology
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KANEMARU Seigo
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Kanemaru S
Aist Ibaraki Jpn
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Yasuda T
Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R
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Furukawa Shoji
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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NOMURA Tooru
Department of Electrical Communication, Shibaura Institute of Technology
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YASUDA Tsutomu
Department of Electrical Communication, Shibaura Institute of Technology
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Yasuda Takeshi
Department Of Applied Science For Electronics And Materials Graduate School Of Engineering Sciences
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TSUTSUI Kazuo
Department of Applied Electronics, Interdisciplinary Graduate School of Science & Engineering, Tokyo
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Yamamoto Hiroshi
Department Of Energy Engineering And Science Nagoya University
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Yasuda Tsutomu
Faculty Of Engineering Tokyo Institute Of Technology
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Yasuda Tsutomu
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Nomura Tooru
Department Of Communication Engineering Faculty Of Engineering Shibaura Institute Of Technology
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Tsutsui Kazuo
Department Of Applied Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tech
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Yamamoto Hiroshi
Departmemt Of Chemical Engineering University Of Tokyo
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Yasuda Tsutomu
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NAKANISHI Yoichiro
Research Institute of Electronics, Shizuoka University
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Nakanishi Yoichiro
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
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Hatanaka Y
Research Institute Of Electronics Shizuoka University
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Hatanaka Yoshinori
Research Institute Of Electronics Shizuoka University:graduate School Of Electric Science And Techno
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Hatanaka Yoshinori
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
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TANABE Masafumi
ULVAC Japan Co., Ltd.
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TSUTSUI Kazuo
Graduate School of Science and Engineering, Tokyo Institute of Technology
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OOBUCHI Ken
Department of Electrical Communication, Shibaura Institute of Technology
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Tanabe M
Ulvac Japan Ltd. Kanagawa Jpn
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SOWA Kunihiro
Department of Electronics, Nippondenso Technical College
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TANABE Masami
Department of Electronics, Nippondenso Technical College
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Oobuchi Ken
Department Of Electrical Communication Shibaura Institute Of Technology
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Yamamoto Hiroshi
Graduate School of Science and Engineering, Tokyo Institute of Technology
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ONO Atsuki
Department of Applied Electronics, Interdisciplinary Graduate School of Science & Engineering, Tokyo
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Ono A
Toshiba Corp. Yokohama
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Tsutsui Kazuo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Mizukami Hiroyuki
Department Of Applied Electronics Tokyo Institute Of Technology:material Laboratory Research Divisio
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Ono Atsuki
Department Of Applied Electronics Interdisciplinary Graduate School Of Science & Engineering Tok
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Sowa Kunihiro
Department Of Electronics Nippondenso Technical College
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Yamamoto Hiroshi
Graduate School Of Environmental Science Hokkaido University
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Yamamoto Hiroshi
Graduate School Of Engineering Utsunomiya University
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Yamamoto Hiroshi
Graduate School of Engineering Science, Osaka University
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ANDO KOJI
Department of Surgery and Science, Graduate School of Medical Sciences, Kyushu University
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KOMA Atsushi
Department of Chemistry, The University of Tokyo
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SATO Yasuhiro
Department of Applied Physics, Hokkaido University
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Hatanaka Y
Shizuoka Univ. Hamamatsu Jpn
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Hatanaka Y
Research Institute Of Electronics
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TSUTSUI Kazuo
Dept. of Electronics and Applied Physics, Tokyo Institute of Technology
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TAMURA Masao
Central Research Laboratory, Hitachi, Ltd.
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SAIKI Koihiro
Department of Chemistry, The University of Tokyo
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ORIHARA Kouzo
Graduate School of Science and Engineering, Tokyo Institute of Technology
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ATANASSOV Rosen
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Orihara Kouzo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Saiki Koihiro
Department Of Chemistry The University Of Tokyo
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Atanassov Rosen
Graduate School Of Science And Engineering Tokyo Institute Of Technology:(present Address) Departmen
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Tamura Masao
Central Research Laboratory
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Tamba Akihiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology:(present Address)hitachi Re
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TOKUYAMA Takashi
Central Research Laboratory
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MIZUKAMI Hiroyuki
Department of Applied Electronics, Tokyo Institute of Technology
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ISHIYAMA Osamu
Department of Applied Electronics, Graduate School of Science & Engineering, Tokyo Institute of Tech
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MIZUKAMI Hiroyuki
Dept. of Applied Electronics, Tokyo Institute of Technology
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ISHIYAMA Osamu
Dept. of Applied Electronics, Tokyo Institute of Technology
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NAKAMURA Satoshi
Dept. of Applied Electronics, Tokyo Institute of Technology
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FURUKAWA Seijiro
Dept. of Applied Electronics, Tokyo Institute of Technology
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SORIMACHI Yoshio
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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Tsutsui Kazuo
Dept. Of Electronics And Applied Physics Tokyo Institute Of Technology
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Ando Koji
Department Of Applied Chemistry Muroran Institute Of Technology
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Sorimachi Yoshio
Graduate School Of Science And Engineering Tokyo Institute Of Technology:(present Address) Technolog
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Ando Koji
Department Of Chemistry The University Of Tokyo
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Sato Yasuhiro
Department Of Chemistry The University Of Tokyo
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Ando Koji
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
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Nakamura Satoshi
Dept. Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
著作論文
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
- Humidity Sensor Using Surface Acoustic Wave Delay Line with Hygroscopic Dielectric Film
- Measurement of Humidity Using Surface Acoustic Wave Device
- Liquid Sensor Using Two-Port Surface Acoustic Wave Resonator : Ultrasonic Measurement
- Growth of Y_2O_2S:Eu Thin Films by Reactive Magnetron Sputtering and Electroluminescent Characteristics
- Characteristics of Y_2O_3:Eu/ZnS/Y_2O_3:Eu Red Light Emitting Electroluminescent Devices
- Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
- Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Control of Epitaxial Relation of GaAs Film on Fluoride/Si(111) Structure
- Effect of Substrate Off-Orientation on GaAs/CaF_2/Si(111) Structure with Rotational Twin
- Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method
- Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy
- Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
- A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures