Hatanaka Yoshinori | Research Institute Of Electronics Shizuoka University:graduate School Of Electric Science And Techno

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概要

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著作論文

Dependence of Cathodoluminescent and Electrical Properties of Phosphors with Conducting Layer by Sol-Gel Method on Layer Thickness
Improvement of Low Voltage Cathodoluminescent Properties of Zinc Sulfide Phosphors by Sol-Gel Method
Study of excimer laser doping process in CdTe
Properties of Sputter-Deposited CdS/CdTe Heterojunction Photodiode
Carrier Transport Properties of Sputter-Deposited CdS/CdTe Heterojunction
Photo-Current Multiplication Phenomenon of Amorphous Silicon-Based Multilayer Photodiodes Fabricated on Crystalline Silicon Substrate : Semiconductors
Growth of Epitaxial ZnO Thin Film by Oxidation of Epitaxial ZnS Film on Si(111) Substrate
Preparation of Heavily N-Type ZnSe Doped by Iodine in Remote Plasma Enhanced Metal Organic Chemical Vapor Deposition
Growth of p-type ZnSe Films by Radical Assisted MOCVD Method
Deposition of Aluminum Nitride by Remote Plasma-Enhanced Chemical Vapor Deposition Using Triisobutyle Aluminum
Thin Film Deposition in the Afterglows of N_2 and H_2 Microwave Plasmas
The Role of Hydrogen Atoms in Afterglow Deposition of Silicon Thin Films
Preparation of ZnO Thin Films Deposited by Plasma Chemical Vapor Deposition for Application to Ultraviolet-cut Coating : Nuclear Science, Plasmas, and Electric Discharges
Amorphous Silicon Avalanche Photodiode Films Using a Functionally Graded Superlattice Structure
Amorphous Silicon Avalanche Photodiode Films Using Functionally Graded Superlattice Structure
Gated Volcano-Shaped Field Emitters with Sharp Polycrystalline-Silicon Tips
Growth of microcrystalline Si films in cathode-type rf GD at high SiH_4 concentration
Preparation of Polycrystalline Silicon Thin Films by Cathode-Type RF Glow Discharge Method
Growth of Highly Oriented Silicon Films on Si(100) and Al_2O_3(0112) by Cathode-type rf Glow Discharge Method
Growth of Y_2O_2S:Eu Thin Films by Reactive Magnetron Sputtering and Electroluminescent Characteristics
Characteristics of Y_2O_3:Eu/ZnS/Y_2O_3:Eu Red Light Emitting Electroluminescent Devices
Structure and Luminescent Property of Y_2O_2S:Eu Thin Films Prepared by Magnetron Sputtering
X-Ray Imaging Sensor Using a Polycrystalline Cadmium Telluride-Hydrogenated Amorphous Silicon Heterojunction
Optoelectrical Properties of Hydrogenated Amorphous Silicon-Polycrystalline Cadmium Telluride Heterojunctions
Amorphous Silicon Resistive Sea for Silicon Vidicon Targets
Low Temperature Fabrication of Thin Film Transistors using Microcrystalline Si Deposited by Cathode-Type RF Glow Discharge
Optimum Gas Pressure of Soft Vacuum Pyroelectric Vidicon
Lag and Resolution Related with Current Distribution of Electron Beam in Camera Tubes
Influence of Bonding Wire on Electron Beam in Camera Tube with NEA Cold Cathode
Remote Plasma Deposition of a-SiC:H Films Using Novel Source Material
Mechanism of Plasma Assisted a-SiC:H Film Deposition
Variation of Stress and Hardness of a-Sic:H Films with Film Composition
Remote Plasma SiO_2 Deposition by Tetraethoxysilane with Chemically and Energetically Different Atomic Species
Photoluminescent Properties of a-SiC:H Films Deposited by Organosilanes in Remote H2 Plasma
Superiority of O(^1D) atom for solid and gas phase reactions over O(^3P) atom
Properties of Atomic Oxygen obtained from Thermodynamically Non-equilibrium High Temperature Plasma

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