Remote Plasma SiO_2 Deposition by Tetraethoxysilane with Chemically and Energetically Different Atomic Species

概要

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Thin films of SiO_2 are deposited using tetraethoxysilane (TEOS) as the source gas in remote rf (13.56 MHz) and microwave plasmas. Depositions were carried out using atomic and molecular radicals of different reactivities generated in O_2, N_2, H_2, Ar and He plasmas. SiO_2 films could be fabricated only in the downstreams of O_2, N_2 and Ar plasmas with the reaction of TEOS. SiO_2 was not produced by TEOS with the reaction of downstream of H_2 or He plasma. SiO_2 deposited with Ar plasma contains a small amount of C. The activation energy of film growth rate varies depending on the partially decomposed TEOS precursor density. Furthermore, the quality of SiO_2 films deposited with energetically different ground-state (O(^3P)) and excited-state (O(^1D)) atomic oxygen environments was comparatively studied. Films deposited in an excess O(^1D) environment show better physical and electrical properties, though the yield of SiO_2 is independent of the state of the atom.
社団法人応用物理学会の論文
1994-06-15