Wickramanayaka Sunil | Research Institute of Electronics, Shizuoka University
スポンサーリンク
概要
関連著者
-
Wickramanayaka Sunil
静岡大 電子工研
-
Wickramanayaka S
Anelva Corporation
-
Hatanaka Y
Shizuoka Univ. Hamamatsu Jpn
-
Hatanaka Y
Research Institute Of Electronics
-
Hatanaka Y
Research Institute Of Electronics Shizuoka University
-
Hatanaka Yoshinori
Research Institute Of Electronics Shizuoka University:graduate School Of Electric Science And Techno
-
Sunil Wickramanayaka
静岡大学電子工学研究所
-
Wickramanayaka Sunil
Research Institute of Electronics, Shizuoka University
-
Wickramanayaka Sunil
Anelva Corporation Head Office
-
Hatanaka Y
Graduate School Of Electronic Science And Technology Shizuoka University
-
NAKANISHI Yoichiro
Research Institute of Electronics, Shizuoka University
-
Nakanishi Yoichiro
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
-
Hatanaka Yoshinori
Research Institute Of Electronics Graduate School Of Electronic Science And Technology Shizuoka Univ
-
Wrobel Aleksander
Polish Academy Of Sciences Center Of Molecular And Macromolecular Sciences
-
Wrobel A.m.
Polish Academy Of Sciences Center Of Molecular And Macromolecular Studies
-
KOMINAMI Hiroko
Graduate School of Electronic Science and Technology, Shizuoka University
-
Kominami H
Shizuoka Univ. Shizuoka Jpn
-
HOSOKAWA Naokichi
ANELVA CORPORATION
-
MATSUMOTO Akihiro
Osaka Municipal Technical Research Institute
-
Matsumoto Akinori
Research Institute Of Electronics Shizuoka University
-
WROBEL Alexander
Polish Academy of Sciences, Center of Molecular and Macromolecular Sciences
-
Kitamura Ken
Res.Inst.Electronics, Shizuoka Univ.
-
Kominami Hiroko
Res.Inst.Electronisc, Shizuoka Univ.
-
Nakanishi Yoichiro
Res.Inst.Electronics, Shizuoka Univ.
-
Hatanaka Yoshinori
Res.inst.Electronics, Shizuoka Univ.
-
Kitamura Ken
Department Of Otolaryngology School Of Medicine Tokyo Medical And Dental University
-
Hosokawa N
Anelva Corp. Tokyo Jpn
著作論文
- Mechanism of Plasma Assisted a-SiC:H Film Deposition
- Remote Plasma SiO_2 Deposition by Tetraethoxysilane with Chemically and Energetically Different Atomic Species
- Photoluminescent Properties of a-SiC:H Films Deposited by Organosilanes in Remote H2 Plasma