Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-05-05
著者
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ASANO Tanemasa
Graduate School of Information Science and Electrical Engineering, Kyushu University
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Asano Tanemasa
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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FURUKAWA Seijiro
Graduate School of Science and Engineering, Tokyo Institute of technology
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ISHIWARA Hiroshi
Graduate School of Science
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ATANASSOV Rosen
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Atanassov Rosen
Graduate School Of Science And Engineering Tokyo Institute Of Technology:(present Address) Departmen
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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FURUKAWA Seigo
Department of Electronics, Nippondenso Technical College
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Furukawa S
Kyushu Inst. Technology Fukuoka Jpn
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Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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