Formation of Ohmic Contacts to n-GaAs by Solid Phase Epitaxy of Evaporated and Ion Implanted Ge Films
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概要
- 論文の詳細を見る
Ge films evaporated on GaAs(100) substrates have been amorphized by ion implantation and recrystallized epitaxially in the solid phase. Ohmic characteristics have been obtained in Ge/n-GaAs heterostructures by implantation of As^+ or P^+ in Ge and Si^+ at the interface. A two-step annealing method was found to be effective to obtain ohmic characteristics. In two-step annealing, the first annealing step at low temperature is for solid phase recrystallization of Ge films; the second step involves rapid high-temperature annealing in order to activate the implanted species. It has also been found that interdiffusion should be minimized in order to obtain good ohmic characteristics.
- 社団法人応用物理学会の論文
- 1987-01-20
著者
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ISHIWARA Hiroshi
Graduate School of Science
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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FUKADA Tsuyoshi
Graduate School of Science and Engineering Tokyo Institute of Technology
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FRUKAWA Seijiro
Graduate School of Science and Engineering Tokyo Institute of Technology
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