Recrystallization of Silicon-on-Insulator Structures by Sinusoidally-Scanned Electron Beams
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概要
- 論文の詳細を見る
This paper describes the recrystallization by an electron beam of Si films deposited on SiO_2./Si structures. To achieve pseudo-line-shaped heating, a spot beam was scanned along a line at frequencies of up to 10kHz. It is predicted theoretically that the temperature profile along the line can be controlled by the scanning waveform and that a concave molten zone edge is obtained wih a sinusoidal scan. It was found experimentally that the recrystallization conditions required for forming a large single-crystal area with a flat surface are rather restricted in the sinusoidal-scan method, since the Si films are broken up or deformed by the temperature gradient along the line. It was also found that overlapping scans of the pseudo-line-shaped beam are effective in increasing the single-crystal area. A nearly single-crystalline Si film of 300×200μm^2 was produced on an SiO_2/Si structure by overlapping scans.
- 社団法人応用物理学会の論文
- 1985-02-20
著者
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ISHIWARA Hiroshi
Graduate School of Science
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Horita Susumu
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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OHYU Kiyonori
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Ohyu Kiyonori
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Horita Susumu
Graduate School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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