Improvement of the Interface Properties of Fluoride/GaAs(100) Structures by Postgrowth Annealing : III-V Compound Semiconductors Devices and Materials(<Special Section>Solid State Devices and Materials 1)
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概要
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The postgrowth annealing technique has been shown to be useful for improving the interface properties of fluoride films grown on GaAs(100) by molecular beam epitaxy. Annealings typically at 800℃-850℃ for 1 min reduce the interface state densities of the fluoride/GaAs interface to about 5×10^<11> /cm^<-2> eV (derived from the 1 MHz) capacitance-voltage measurement) in both n- and p-type substrates. Photoluminescence intensity of the CaF_2-coated GaAs was compared before and after annealing. Ambient dependency during annealing was also investigated by measuring the structural and electrical properties of the films.
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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FURUKAWA Seijiro
Graduate School of Science and Engineering, Tokyo Institute of technology
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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HO KIM
Graduate School of Science and Engineering, Tokyo Institute of Technology
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ISHIWARA Hirohsi
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hirohsi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ho Kim
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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