Epitaxial Silicide Films for Integrated Circuits and Future Devices : A-1: OPENING
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
-
ISHIWARA Hiroshi
Graduate School of Science
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Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
関連論文
- Contactless Measurement of Semiconductor Mobility Conductivity and Carrier Concentration : B-3: CRYSTAL GROWTH AND DEFECTS
- Theoretical Considerations on Lateral Spread of Implanted Ions
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- Single Crystalline Silicide Formation
- Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
- Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
- Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
- A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
- Formation of Ohmic Contacts to n-GaAs by Solid Phase Epitaxy of Evaporated and Ion Implanted Ge Films
- Improvement of the Interface Properties of Fluoride/GaAs(100) Structures by Postgrowth Annealing : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Epitaxial Growth of Ge Films onto CaF_2/Si Structures
- Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates
- Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
- Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation
- Recrystallization of Silicon-on-Insulator Structures by Sinusoidally-Scanned Electron Beams
- Formation of Shallow p^+n Junctions by B-Ion Implantation in Si substrates with Amorphous Layers
- Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
- Formation of Uniform Solid-Phase Epitaxial CoSi_2 Films by Patterning Method
- Epitaxial Silicide Films for Integrated Circuits and Future Devices : A-1: OPENING
- Solid Phase Epitaxy of Highly-Doped Si: B Films Deposited on Si(100) Substrates
- Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy
- Photoluminescence from GaAs/CaF_2/Si Structure Grown by Electron-Beam Exposure (EBE) and Epitaxy Method
- Scannning Electron Beam Annealing of P-Ion-Implanted Si(100) and (111) Substrates
- Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures : A-6: SILICON CRYSTALS
- Preparation of Yb-Ba-Cu-O Superconducting Films Using an Arc Discharge Evaporation Method
- Study on Saturation Power in SAW Amplifiers
- Heteroepitaxial Growth of GaAs Films on CaF2/Si(511) Structures Prepared with Rapid Thermal Annealing