Formation of Uniform Solid-Phase Epitaxial CoSi_2 Films by Patterning Method
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概要
- 論文の詳細を見る
This paper reports that uniform solid-phase epitaxial CoSi_2 films without any holes can be fabricated by patterning the Si(111) substrate in the form of squares or stripes before the CoSi_2 epitaxial growth. The surface energies of the CoSi_2 and Si are considered theoretically. Since the surface energy of the Si(111) surface is smaller than that of the CoSi_2(111) surface, the film tends to expose the Si substrate, forming holes in the films. The total surface energy on the patterned area is calculated numerically, showing that the film will be uniform if the pattern size is smaller than a certain critical dimension. The numerical calculations agree qualitatively with the experimental results.
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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ISHIBASHI Kouichirou
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Ishibashi Kouichirou
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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