Photoluminescence from GaAs/CaF_2/Si Structure Grown by Electron-Beam Exposure (EBE) and Epitaxy Method
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概要
- 論文の詳細を見る
The GaAs layers grown on CaF_2/Si(111) structures by the electron-beam exposure and epitaxy (EBE-epitaxy) method were studied by photoluminescence (PL) measurements at the temperatures ranging from 10 K to 300 K for the first time. It is shown that the EBE-epitaxy was effective to improve the PL intensity of the GaAs layer grown on CaF_2/Si structure, and this structure has a high potential for optical device applications. Furthermore, the stress of the GaAs layer grownon CaF_2/Si substrate is expected to be reduced by the CaF_2 layer compared with that of GaAs/Si structure.
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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TSUTSUI Kazuo
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Tsutsui Kazuo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Furukawa Seijiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Uchigoshi Masahiro
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Uchigoshi Masahiro
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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