Theoretical Considerations on Lateral Spread of Implanted Ions

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1972-02-05

著者

• Matsumura Hideki

  Department Of Applied Electronics Tokyo Institute Of Technology

• Matsumura Hideki

  Graduate School Of Science And Engineering Tokyo Institute Of Technology

• FURUKAWA Seijiro

  Graduate School of Science and Engineering, Tokyo Institute of technology

• ISHIWARA Hiroshi

  Graduate School of Science

• FURUKAWA Seijiro

  Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology

• ISHIWARA Hiroshi

  Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology

• Ishiwara Hiroshi

  Department Of Applied Electronics Tokyo Institute Of Technology

• Furukawa Seijiro

  Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo

• Furukawa Seijiro

  Department Of Applied Electronics Graduate School Of Science And Technology

• Ishiwara Hiroshi

  Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

関連論文

• Contactless Measurement of Semiconductor Mobility Conductivity and Carrier Concentration : B-3: CRYSTAL GROWTH AND DEFECTS
• Theoretical Considerations on Lateral Spread of Implanted Ions
• Dependency of Boron Doping Efficiency on Hydrogen Flow Rate in Hydro-Fluorinated Amorphous Silicon
• Properties of Hydro-Fluorinated Amorphous Silicon-Carbide Produced by Intermediate Species SiF_2
• The Staebler-Wronski Effect in Hydro-Fluorinated Amorphous Silicon Prepared Using the Intermediate Species SiF_2
• Photoconductive Amorphous Silicon-Carbide Produced by Intermediate Species SiF_2 and CF_4 Mixture
• An Amorphous-Silicon Film Usable at High-Temperature : Annealing Properties of a New Fluorinated Amorphous-Silicon : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
• A Comparison of the Thermal Stabilities of Fluorinated and Hydrogenated Amorphous-Silicons
• Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
• Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
• Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
• Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
• Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
• Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
• Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
• Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
• Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
• Single Crystalline Silicide Formation
• Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
• Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
• Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
• Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
• Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
• Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
• Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
• Effective Interaction for the Jastrow Model Wave Function with the Transcorrelated Method(Nuclear Physics)
• Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array
• Hall Mobility of Low-Temperature-Deposited Polysilicon Films by Catalytic Chemical Vapor Deposition Method
• Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si:F, a-Si:F, H and a-Si:F, D)
• Photoluminescence of a-Si:H Films Prepared by Catalytic Chemical Vapor Deposition Method
• Photo-Conductive, Low Impurity-Diffusive, Heat-Resisting a-Si Formed by Glow-Discharged Decomposition of SiF_2 and H_2 Mixture : C-5: SOLAR CELLS
• Formation of Polysilicon Films by Catalytic Chemical Vapor Deposition (cat-CVD) Method
• Theoretical Considerations in Lateral Damage Distribution Formed by Ion-Implantation
• Low Temperature Deposition of Silicon Nitride by the Catalytic Chemical Vapor Deposition Method : Etching and Deposition Technology
• Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
• Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
• On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
• Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
• Catalytic Chemical Vapor Deposition (CTC-CVD) Method Producing High Quality Hydrogenated Amorphous Silicon
• A New X-Ray Lithographic Technique Using Total Reflection of X-Rays from a Pattern Plate
• Study on Impurity Diffusion in Glow-Discharged Amorphous Silicon
• Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
• Control of Epitaxial Relation of GaAs Film on Fluoride/Si(111) Structure
• Effect of Substrate Off-Orientation on GaAs/CaF_2/Si(111) Structure with Rotational Twin
• Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method
• Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
• Preparation and Electrical Properties of An Amorphous SiC/Crystalline Si P^+n Heterostructure
• Long-lasting Inhibition of Soleus H-reflex Induced by Successive Twitch Contractions of Tibialis Anterior in Trained and Sedentary Human Subjects
• Properties of Excited Surface-Wave Domains in CdS
• Multi-bit Programming for 1T-FeRAM by Local Polarization Method
• A New Circuit Simulation Model of Ferroelectric Capacitors
• A New Circuit Simulation Model of Ferroelectric Capacitors
• A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
• Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
• Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
• Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
• Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
• Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
• Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
• Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface
• A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
• Study on Efficiency of Piezoelectric Semiconductor SAW Convolver
• Formation of Ohmic Contacts to n-GaAs by Solid Phase Epitaxy of Evaporated and Ion Implanted Ge Films
• Improvement of the Interface Properties of Fluoride/GaAs(100) Structures by Postgrowth Annealing : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
• Epitaxial Growth of Ge Films onto CaF_2/Si Structures
• Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates
• Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
• Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation
• Study of Epitaxial Growth of Rotational-Twin-Free CaF_2 Films on Si(111)
• Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
• Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
• Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• Study on Measurement of Carrier Effective Lifetime in Furnace and Laser Annealed Diodes
• Recrystallization of Silicon-on-Insulator Structures by Sinusoidally-Scanned Electron Beams
• Formation of Shallow p^+n Junctions by B-Ion Implantation in Si substrates with Amorphous Layers
• Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
• Epitaxial Silicide Films for Integrated Circuits and Future Devices : A-1: OPENING
• Solid Phase Epitaxy of Highly-Doped Si: B Films Deposited on Si(100) Substrates
• Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy
• Scannning Electron Beam Annealing of P-Ion-Implanted Si(100) and (111) Substrates
• The Lattice Location of Phosphorus Atoms Implanted into Silicon
• Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures : A-6: SILICON CRYSTALS
• Fabrication and Characterization of 1 k-bit 1T2C-Type Ferroelectric Memory Cell Array
• Juvenile myelomonocytic leukemia characterized by cutaneous lesion containing Langerhans cell histiocytosis-like cells
• Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
• Mass Dependence of Critical Amorphizing Dose in Ion Implantation
• Studies on Formation Characteristics and Mechanism of SiC on Si and Metal-Silicides by Using Ion Backscattering Techniques
• The Loss Characteristics of a Semiconductor Travelling Wave Amplifier
• Study of Shallow p^+n Junction Formation Using SiGe/Si System
• Experimental Simulation on the Beam Heating Effects in Ion Implantation Techniques
• Measurement of Energy Propagation Direction of Acoustoelectric Domains in Anisotropic Crystal
• Preparation of Yb-Ba-Cu-O Superconducting Films Using an Arc Discharge Evaporation Method
• Drain Current Characteristics of Ferroelectric Gate-All-Around Si Nanowire Transistors Based on Drift/Diffusion Transport Theory
• Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal-Oxide-Semiconductor Diodes with Yb Donor Layer
• Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
• Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO
• Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator
• Effective Interaction for the Jastrow Model Wave Function with the Transcorrelated Method(Nuclear Physics)
• Low Temperature Deposition of Silicon Nitride by the Catalytic Chemical Vapor Deposition Method

もっと見る 閉じる

スポンサーリンク