Theoretical Considerations on Lateral Spread of Implanted Ions
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1972-02-05
著者
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Matsumura Hideki
Department Of Applied Electronics Tokyo Institute Of Technology
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Matsumura Hideki
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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FURUKAWA Seijiro
Graduate School of Science and Engineering, Tokyo Institute of technology
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ISHIWARA Hiroshi
Graduate School of Science
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FURUKAWA Seijiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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ISHIWARA Hiroshi
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Furukawa Seijiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Furukawa Seijiro
Department Of Applied Electronics Graduate School Of Science And Technology
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
関連論文
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- Theoretical Considerations on Lateral Spread of Implanted Ions
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- Properties of Hydro-Fluorinated Amorphous Silicon-Carbide Produced by Intermediate Species SiF_2
- The Staebler-Wronski Effect in Hydro-Fluorinated Amorphous Silicon Prepared Using the Intermediate Species SiF_2
- Photoconductive Amorphous Silicon-Carbide Produced by Intermediate Species SiF_2 and CF_4 Mixture
- An Amorphous-Silicon Film Usable at High-Temperature : Annealing Properties of a New Fluorinated Amorphous-Silicon : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- A Comparison of the Thermal Stabilities of Fluorinated and Hydrogenated Amorphous-Silicons
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
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- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Catalytic Chemical Vapor Deposition (CTC-CVD) Method Producing High Quality Hydrogenated Amorphous Silicon
- A New X-Ray Lithographic Technique Using Total Reflection of X-Rays from a Pattern Plate
- Study on Impurity Diffusion in Glow-Discharged Amorphous Silicon
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
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- Effect of Substrate Off-Orientation on GaAs/CaF_2/Si(111) Structure with Rotational Twin
- Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method
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- Preparation and Electrical Properties of An Amorphous SiC/Crystalline Si P^+n Heterostructure
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- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
- Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
- Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface
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- Study on Efficiency of Piezoelectric Semiconductor SAW Convolver
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