Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,<Special Section>Fundamentals and Applications of Advanced Semiconductor Devices)
スポンサーリンク
概要
- 論文の詳細を見る
We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A vertical cavity formed between the two-dimensional plasmon grating plane and an indium-tin-oxide mirror at the back surface gains the radiation. Self-oscillation initially at around 4.5THz excited by a dc-photo carrier component was reinforced by the photomixed differential-frequency excitation at 4.0 and 5.0THz. This indicates a possibility of injection-locked oscillation of the photomixer in the terahertz frequency band.
- 社団法人電子情報通信学会の論文
- 2007-05-01
著者
-
Sano Eiichi
Research Center For Integrated Quantum Electronics Hokkaido University
-
Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
-
Otsuji Taiichi
Japan Science And Technology Agency Crest
-
HANABE Mitsuhiro
Research Institute of Electrical Communication, Tohoku University
-
MEZIANI Yahya
Research Institute of Electrical Communication, Tohoku University
-
ASANO Tanemasa
Graduate School of Information Science and Electrical Engineering, Kyushu University
-
Meziani Yahya
Research Institute Of Electrical Communication Tohoku University
-
Sano Eiichi
Hokkaido Univ. Sapporo Jpn
-
HANABE Mitsuhiro
Kyushu Institute of Technology
-
Hanabe Mitsuhiro
Research Institute Of Electrical Communication Tohoku University
-
Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
-
Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
-
Otsuji Taiichi
Tohoku Univ. Sendai Jpn
-
Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
関連論文
- Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant nano-transistors(Session7: Millimeter-wave and Terahertz Devices)
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Threshold behavior of photoinduced plasmons-resonant self-oscillation in a new interdigitated grating gates device (Special issue: Solid state devices and materials)
- Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
- Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure
- Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator
- Device Model for Graphene Nanoribbon Phototransistor
- Tunneling Current-Voltage Characteristics of Graphene Field-Effect Transistor
- Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
- 招待講演 Theoretical study on graphene field-effect transistors (Silicon devices and materials)
- Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors
- 招待講演 Theoretical study on graphene field-effect transistors (Electron devices)
- W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- Evaluation of Digitally Controlled PLL by Clock-Period Comparison(Analog Circuits and Related SoC Integration Technologies)
- Resonant terahertz photomixing in integrated HEMT-QWIP device
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- Single Crystalline Silicide Formation
- Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
- Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
- Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation
- Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
- Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
- Analytical Expressions for Maximum Operating Frequencies of Emitter-Coupled Logic and Source-Coupled FET Logic Toggle Flip-Flops(Electronic Circuits)
- Oriented Growth of Location-Controlled Si Crystal Grains Using Ni Nano-Imprint and Excimer Laser Annealing
- Terahertz Wave Filter from Cascaded Thin-Metal-Film Meshes with a Triangular Array of Hexagonal Holes
- An Intensity Modulator for Terahertz Electromagnetic Waves Utilizing Two-Dimensional Plasmon Resonance in a Dual-Grating-Gate High-Electron-Mobility Transistor
- Theoretical study of population inversion in graphene under pulse excitation (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter
- Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
- Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
- Graphene Nanoribbon Phototransistor: Proposal and Analysis
- Effect of Heating and Cooling of Photogenerated Electron--Hole Plasma in Optically Pumped Graphene on Population Inversion
- Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect
- Characteristics of p--i--n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures
- Theoretical Study of Population Inversion in Graphene under Pulse Excitation
- Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
- Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
- Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
- Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
- Effect of Argon/Hydrogen Plasma Cleaning on Electroless Ni Deposition on Small-Area Al Pads
- Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
- Formation of Ohmic Contacts to n-GaAs by Solid Phase Epitaxy of Evaporated and Ion Implanted Ge Films
- Improvement of the Interface Properties of Fluoride/GaAs(100) Structures by Postgrowth Annealing : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Epitaxial Growth of Ge Films onto CaF_2/Si Structures
- Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates
- Monte Carlo Simulation of InP/InGaAs Heterojunction Bipolar Transistors Considering Quantum Effects through an Effective Potential : Semiconductors
- Characteristics of p-i-n terahertz and infrared photodiodes based on multiple graphene layer structures (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)
- Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels
- Pulse Compression by Quasi-Steady Propagation along Switch Lines
- Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
- A Theoretical Comparison of Strained-Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors and Conventional Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using a Drift-Diffusion-Based Simulator
- Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures : A-6: SILICON CRYSTALS
- Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
- Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
- Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
- Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
- Simulation of Carrier Transport across Heterojunctions Based on Drift-Diffusion Model Incorporating an Effective Potential : Semiconductors
- Silicon Crystal Nanowires Produced by Metal-Induced Lateral Crystallization
- Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel High Electron Mobility Transistors
- Impact of Rapid Crystallization of Si Using Nickel-Metal-Induced Lateral Crystallization on Thin-Film Transistor Characteristics
- Room-Temperature Microjoining of LSI Chips on Poly(ethylene naphthalate) Film Using Mechanical Caulking of Au Cone Bump
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
- Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors
- Threshold Behavior of Photoinduced Plasmon-Resonant Self-Oscillation in a New Interdigitated Grating Gates Device
- Terahertz Wave Filter from Cascaded Thin-Metal-Film Meshes with a Triangular Array of Hexagonal Holes
- Development of Solitons in Composite Right- and Left-Handed Transmission Lines Periodically Loaded with Varactors with Symmetrical Capacitance–Voltage Characteristics
- Oriented Growth of Location-Controlled Si Crystal Grains by Ni Nano-Imprint and Excimer Laser Annealing
- Room-Temperature Cu Microjoining with Ultrasonic Bonding of Cone-Shaped Bump
- Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution
- Effect of argon/hydrogen plasma cleaning on electroless ni deposition on small-area al pads
- Terahertz Transmission Property of a Thin Metal Hole-Array Filter
- Mode-Expansion Analysis of Evanescent Modes Excited by Electrons Moving above Metal Grating
- Formation of Diamond-Like Carbon Films by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition
- Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution (Special Issue : Microprocesses and Nanotechnology)
- Transmission Characteristics through Two-Dimensional Periodic Hole Arrays Perforated in Perfect Conductors