Otsuji Taiichi | Japan Science And Technology Agency Crest
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概要
関連著者
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Otsuji Taiichi
Japan Science And Technology Agency Crest
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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HANABE Mitsuhiro
Kyushu Institute of Technology
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Ryzhii Victor
Computational Nanoelectronics Laboratory University Of Aizu
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Ryzhii V
Univ. Aizu Fukushima
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RYZHII Victor
Computational Nanoelectronics Laboratory, University of Aizu
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Ryzhii Victor
Univ. Aizu Aizu‐wakamatsu Jpn
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Sano Eiichi
Hokkaido Univ. Sapporo Jpn
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Hanabe Mitsuhiro
Research Institute Of Electrical Communication Tohoku University
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Otsuji Taiichi
Tohoku Univ. Sendai Jpn
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Ryzhii Victor
Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
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Sano Eiichi
Research Center For Integrated Quantum Electronics Hokkaido University
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Ryzhii M
Computational Nanoelectronics Laboratory University Of Aizu
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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RYZHII Maxim
Computational Nanoelectronics Laboratory, University of Aizu
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Nishimura Takuya
Graduate School Of Computer Science And Systems Engineering Kyushu Institute Of Technology:(present
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HANABE Mitsuhiro
Research Institute of Electrical Communication, Tohoku University
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NISHIMURA Takuya
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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HANABE Mitsuhiro
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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MIYAMOTO Masaki
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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SHUR Michael
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute
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Shur Michael
Department Of Electrical Electronics And System Engineering Rensselaer Polytechnic Institute
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Miyamoto Masaki
Graduate School Of Computer Science And Systems Engineering Kyushu Institute Of Technology
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Mitin Vladimir
Department Of Electrical Engineering University At Buffalo
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SATOU Akira
Research Institute of Electrical Communication, Tohoku University
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Satou Akira
Research Institute Of Electrical Communication Tohoku University
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MEZIANI Yahya
Research Institute of Electrical Communication, Tohoku University
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ASANO Tanemasa
Graduate School of Information Science and Electrical Engineering, Kyushu University
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DUBINOV Alexander
Computational Nanoelectronics Laboratory, University of Aizu
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ALESHKIN Vladimir
Institute for Physics of Microstructures, Russian Academy of Sciences
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MITIN Vladimir
Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu
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RYABOVA Nadezhda
Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu
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SATOU Akira
Computer Solid State Physics Laboratory, University of Aizu
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Meziani Yahya
Research Institute Of Electrical Communication Tohoku University
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Moubarak Meziani
Research Institute Of Electrical Communication Tohoku University
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RYZHII Victor
University of Aizu
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RYZHII Victor
Comp. Solid State Physics Lab, Univ. of Aizu
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RYZHII Maxim
Comp. Solid State Physics Lab, Univ. of Aizu
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KHMYROVA Irina
Comp. Solid State Physics Lab, Univ. of Aizu
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SHUR Michael
Dept. of ECS Eng., Rensselaer Polytechnic Inst.
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OTSUJI Taiichi
Kyushu Institute of Technology
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ISHIBASHI Takuma
Kyushu Institute of Technology
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UNO Tomohiro
Kyushu Institute of Technology
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Dubinov Alexander
Computational Nanoelectronics Laboratory University Of Aizu
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Ryzhii Victor
Univ. Aizu Fukushima Jpn
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Shur Michael
Department Of Electrical Computer And System Engineering Rensselaer Polytechnic Institute
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Khmyrova I
Comp. Solid State Physics Lab Univ. Of Aizu
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BOUBANGA TOMBET
Research Institute of Electrical Communication, Tohoku University
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Ryabova Nadezhda
Computational Nanoelectronics Laboratory University Of Aizu Aizu-wakamatsu
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Aleshkin Vladimir
Institute For Physics Of Microstructures Russian Academy Of Sciences
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Boubanga Tombet
Research Institute Of Electrical Communication Tohoku University
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佐藤 昭
Research Institute of Electrical Communication, Tohoku University
著作論文
- Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Threshold behavior of photoinduced plasmons-resonant self-oscillation in a new interdigitated grating gates device (Special issue: Solid state devices and materials)
- Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
- Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure
- Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator
- Device Model for Graphene Nanoribbon Phototransistor
- Tunneling Current-Voltage Characteristics of Graphene Field-Effect Transistor
- Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
- Resonant terahertz photomixing in integrated HEMT-QWIP device
- Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
- Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation
- Theoretical study of population inversion in graphene under pulse excitation (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Characteristics of p-i-n terahertz and infrared photodiodes based on multiple graphene layer structures (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)