Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-09-25
著者
-
Otsuji Taiichi
Japan Science And Technology Agency Crest
-
DUBINOV Alexander
Computational Nanoelectronics Laboratory, University of Aizu
-
ALESHKIN Vladimir
Institute for Physics of Microstructures, Russian Academy of Sciences
-
RYZHII Maxim
Computational Nanoelectronics Laboratory, University of Aizu
-
RYZHII Victor
Computational Nanoelectronics Laboratory, University of Aizu
-
Ryzhii M
Computational Nanoelectronics Laboratory University Of Aizu
-
Ryzhii Victor
Computational Nanoelectronics Laboratory University Of Aizu
-
Ryzhii V
Univ. Aizu Fukushima
-
Ryzhii Victor
Univ. Aizu Aizu‐wakamatsu Jpn
-
Dubinov Alexander
Computational Nanoelectronics Laboratory University Of Aizu
-
Aleshkin Vladimir
Institute For Physics Of Microstructures Russian Academy Of Sciences
-
Ryzhii Victor
Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
関連論文
- Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Threshold behavior of photoinduced plasmons-resonant self-oscillation in a new interdigitated grating gates device (Special issue: Solid state devices and materials)
- Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
- Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure
- Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator
- Device Model for Graphene Nanoribbon Phototransistor
- Tunneling Current-Voltage Characteristics of Graphene Field-Effect Transistor
- Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
- Electric-Field Breakdown of Absolute Negative Conductivity and Supersonic Streams in Two-Dimensional Electron Systems with Zero Resistance/Conductance States
- Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Resonant Detection and Frequency Multiplication in Barrier-Injection Heterostructure Transistors
- Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plaslma Oscillations in High-Electron-Mobility Transistors : Semiconductors
- Graphene nanoribbon phototransistor: proposal and analysis (Special issue: Solid state devices and materials)
- Analysis of the Photocurrent in Quantum Dot Infrared Photodetectors : Semiconductors
- Spectrum of plasma oscillations in a slot diode with a two-dimensional electron channel
- Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
- Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device (Special Issue: Solid State Devices & Materials)
- Resonant terahertz photomixing in integrated HEMT-QWIP device
- Dark Current in Quantum Dot Infrared Photodetectors
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Effect of Donor Space Charge on Electron Capture Processes in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- High-Frequency Response of Metal-Semiconductor-Metal Photodetectors Limited by Dynamic and Recombination Effects
- Influence of Electron Velocity Overshoot Effect on High-Frequency Characteristics of Quantum Well Infrared Photodetectors
- Optically Controlled Plasma Resonances in Induced-Base Hot-Electron Transistors
- High-Frequency Response of Intersubband Infrared Photodetectors with a Multiple Quantum Well Structure
- Resonant-Tunneling Bipolar Transistors with a Quantum-Well Base
- Modeling of Lateral Hot-Electron Phototransistor for Long-Wave Length Infrared Radiation
- Quantum Well Infrared Photodetector with Optical Output
- Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
- Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation
- Injection and Population Inversion in Electrically Induced p-n Junction in Graphene with Split Gates
- High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
- Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures
- Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
- Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation
- Unipolar Darlington Infrared Phototransistor
- Theoretical study of population inversion in graphene under pulse excitation (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Graphene Nanoribbon Phototransistor: Proposal and Analysis
- Effect of Photon Recycling in Pixelless Imaging Device
- Effect of Heating and Cooling of Photogenerated Electron--Hole Plasma in Optically Pumped Graphene on Population Inversion
- Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect
- Characteristics of p--i--n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures
- Theoretical Study of Population Inversion in Graphene under Pulse Excitation
- Characteristics of p-i-n terahertz and infrared photodiodes based on multiple graphene layer structures (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
- Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)
- Detection of Modulated Terahertz Radiation Using Combined Plasma and Mechanical Resonances in Double-Carbon-Nanotube Device
- Spectrum of Plasma Oscillations in Slot Diode with Two-Dimensional Electron Channel
- Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
- High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
- Terahertz Plasma Waves in Gated Graphene Heterostructures
- Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation
- Microwave-Induced Suppression of Dissipative Conductivity and Its Shubnikov–de Haas Oscillations in Two-Dimensional Electron Systems: Effects of Dynamic Electron Localization and Plasma Reflection
- Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures