Mitin Vladimir | Department Of Electrical Engineering University At Buffalo

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概要

• 同名の論文著者
• Department Of Electrical Engineering University At Buffaloの論文著者

関連著者

• Mitin Vladimir

  Department Of Electrical Engineering University At Buffalo

• Otsuji Taiichi

  Japan Science And Technology Agency Crest

• RYZHII Maxim

  Computational Nanoelectronics Laboratory, University of Aizu

• RYZHII Victor

  Computational Nanoelectronics Laboratory, University of Aizu

• Ryzhii M

  Computational Nanoelectronics Laboratory University Of Aizu

• Ryzhii Victor

  Computational Nanoelectronics Laboratory University Of Aizu

• Ryzhii V

  Univ. Aizu Fukushima

• Ryzhii Victor

  Univ. Aizu Aizu‐wakamatsu Jpn

• Ryzhii Victor

  Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan

• Otsuji Taiichi

  Research Institute Of Electrical Communication Tohoku University

• MITIN Vladimir

  Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu

• RYABOVA Nadezhda

  Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu

• SHUR Michael

  Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute

• MITIN Vladimir

  Department of Electrical Engineering, University at Buffalo

• Shur Michael

  Department Of Electrical Electronics And System Engineering Rensselaer Polytechnic Institute

• Mitin Vladimir

  Department Of Electrical And Computer Engineering Wayne State University

• Shur Michael

  Department Of Electrical Computer And System Engineering Rensselaer Polytechnic Institute

• Ryabova Nadezhda

  Computational Nanoelectronics Laboratory University Of Aizu Aizu-wakamatsu

• Otsuji Taiichi

  Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan

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著作論文

• Device Model for Graphene Nanoribbon Phototransistor
• Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
• Characteristics of p-i-n terahertz and infrared photodiodes based on multiple graphene layer structures (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)

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