RYZHII Victor | Computational Nanoelectronics Laboratory, University of Aizu
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概要
関連著者
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RYZHII Victor
Computational Nanoelectronics Laboratory, University of Aizu
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Ryzhii Victor
Computational Nanoelectronics Laboratory University Of Aizu
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Ryzhii V
Univ. Aizu Fukushima
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Ryzhii M
Computational Nanoelectronics Laboratory University Of Aizu
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Ryzhii Victor
Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
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Ryzhii V
Univ. Aizu Aizu-wakamatsu Jpn
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KHMYROVA Irina
Comp. Solid State Physics Lab, Univ. of Aizu
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Khmyrova I
Comp. Solid State Physics Lab Univ. Of Aizu
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RYZHII Maxim
Computational Nanoelectronics Laboratory, University of Aizu
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SHUR Michael
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute
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Ryzhii Victor
Univ. Aizu Aizu‐wakamatsu Jpn
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Otsuji Taiichi
Japan Science And Technology Agency Crest
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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RYZHII Victor
Department of Computer Hardware, University of Aizu
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Ryzhii Victor
Department Of Compurter Hardware University Of Aizu
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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RYZHII Victor
University of Aizu
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KHMYROVA Irina
Computer Solid State Physics Laboratory, University of Aizu
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KHMYROVA Irina
Department of Computer Hardware, University of Aizu
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RYZHII Maxim
Department of Computer Hardware, University of Aizu
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Willander Magnus
Department Of Microelectronics And Nanoscience Chalmers University Of Technology And Gothenburg Univ
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Willander Magnus
Microelectronics Center At Chalmers And Department Of Physics University Of Goteborg And Chalmers Un
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Willander Magnus
Department Of Physics Linkoping University
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Shur Michael
Department Of Electrical Electronics And System Engineering Rensselaer Polytechnic Institute
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Shur Michael
Department Of Electrical Computer And System Engineering Rensselaer Polytechnic Institute
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Ryzhii Maxim
University Of Aizu
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Hamaguchi C
Osaka Univ. Osaka Jpn
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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SURIS Robert
A.F.Ioffe Physical-Technical Institute
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KHMYROVA Irina
University of Aizu
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Khmyrova Irina
Computational Nanoelectronics Laboratory University Of Aizu
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SATOU Akira
Research Institute of Electrical Communication, Tohoku University
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Satou Akira
Research Institute Of Electrical Communication Tohoku University
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SATOU Akira
Computer Solid State Physics Laboratory, University of Aizu
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Ryzhii Victor
Computer Solid State Physics Laboratory University Of Aizu
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MITIN Vladimir
Department of Electrical Engineering, University at Buffalo
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SURIS Robert
A.F. Ioffe Physical-Technical Institute RAS
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WILLANDER Magnus
Chalmers University of Technology and Gothenburg University
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Mitin Vladimir
Department Of Electrical Engineering University At Buffalo
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Mitin Vladimir
Department Of Electrical And Computer Engineering Wayne State University
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DUBINOV Alexander
Computational Nanoelectronics Laboratory, University of Aizu
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ALESHKIN Vladimir
Institute for Physics of Microstructures, Russian Academy of Sciences
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MITIN Vladimir
Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu
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RYABOVA Nadezhda
Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu
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Ryzhii Maxim
Computer Solid State Physics Laboratory University Of Aizu
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ISHIBASHI Tadao
NTT Photonics Laboratories
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WILLANDER Magnus
Department of Physics and Measurement Technology, Linkoping University
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SATOU Akira
University of Aizu
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Ryzhii Victor
Computer Solid State Physics Laboratory University Ofaizu
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RYZHII Victor
Comp. Solid State Physics Lab, Univ. of Aizu
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RYZHII Maxim
Comp. Solid State Physics Lab, Univ. of Aizu
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SHUR Michael
Dept. of ECS Eng., Rensselaer Polytechnic Inst.
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PIPA Victor
Department of Electrical and Computer Engineering, Wayne State University
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WILLANDER Magnus
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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KHRENOV Gregory
Department of Computer Hardware, University of Aizu
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ERSHOV Maxim
Department of Computer Hardware, University of Aizu
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Suris Robert
A. F. Ioffe Physical-technical Institute Russian Academy Of Sciences
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Dubinov Alexander
Computational Nanoelectronics Laboratory University Of Aizu
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Ryzhii Victor
Department Of Computer Hardware University Of Aizu
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Pipa Victor
Department Of Electrical And Computer Engineering Wayne State University
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Ershov Maxim
Department Of Computer Hardware University Of Aizu
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Shur M
Department Of Electrical Computer And System Engineering Rensselaer Polytechnic Institute
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BANDARA Sumith
Jet Propulsion Laboratory, California Institute of Technology
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GUNAPALA Sarath
Jet Propulsion Laboratory, California Institute of Technology
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BOUBANGA TOMBET
Research Institute of Electrical Communication, Tohoku University
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Ryabova Nadezhda
Computational Nanoelectronics Laboratory University Of Aizu Aizu-wakamatsu
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Aleshkin Vladimir
Institute For Physics Of Microstructures Russian Academy Of Sciences
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Khrenov Gregory
Department Of Computer Hardware University Of Aizu
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Boubanga Tombet
Research Institute Of Electrical Communication Tohoku University
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Satou A
University Of Aizu
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佐藤 昭
Research Institute of Electrical Communication, Tohoku University
著作論文
- Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator
- Device Model for Graphene Nanoribbon Phototransistor
- Tunneling Current-Voltage Characteristics of Graphene Field-Effect Transistor
- Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
- Electric-Field Breakdown of Absolute Negative Conductivity and Supersonic Streams in Two-Dimensional Electron Systems with Zero Resistance/Conductance States
- Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Resonant Detection and Frequency Multiplication in Barrier-Injection Heterostructure Transistors
- Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plaslma Oscillations in High-Electron-Mobility Transistors : Semiconductors
- Analysis of the Photocurrent in Quantum Dot Infrared Photodetectors : Semiconductors
- Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
- Resonant terahertz photomixing in integrated HEMT-QWIP device
- Dark Current in Quantum Dot Infrared Photodetectors
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Effect of Donor Space Charge on Electron Capture Processes in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- High-Frequency Response of Metal-Semiconductor-Metal Photodetectors Limited by Dynamic and Recombination Effects
- Influence of Electron Velocity Overshoot Effect on High-Frequency Characteristics of Quantum Well Infrared Photodetectors
- Optically Controlled Plasma Resonances in Induced-Base Hot-Electron Transistors
- High-Frequency Response of Intersubband Infrared Photodetectors with a Multiple Quantum Well Structure
- Resonant-Tunneling Bipolar Transistors with a Quantum-Well Base
- Modeling of Lateral Hot-Electron Phototransistor for Long-Wave Length Infrared Radiation
- Quantum Well Infrared Photodetector with Optical Output
- Injection and Population Inversion in Electrically Induced p-n Junction in Graphene with Split Gates
- High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
- Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures
- Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
- Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation
- Unipolar Darlington Infrared Phototransistor
- Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)