RYZHII Victor | University of Aizu
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概要
関連著者
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RYZHII Victor
University of Aizu
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RYZHII Victor
Computational Nanoelectronics Laboratory, University of Aizu
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Ryzhii Maxim
University Of Aizu
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Ryzhii Victor
Computational Nanoelectronics Laboratory University Of Aizu
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Ryzhii V
Univ. Aizu Fukushima
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Ryzhii M
Computational Nanoelectronics Laboratory University Of Aizu
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Ryzhii V
Univ. Aizu Aizu-wakamatsu Jpn
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KHMYROVA Irina
Comp. Solid State Physics Lab, Univ. of Aizu
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KHMYROVA Irina
University of Aizu
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Khmyrova I
Comp. Solid State Physics Lab Univ. Of Aizu
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SATOU Akira
University of Aizu
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WILLANDER Magnus
Chalmers University of Technology and Gothenburg University
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Willander Magnus
Department Of Microelectronics And Nanoscience Chalmers University Of Technology And Gothenburg Univ
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Willander Magnus
Microelectronics Center At Chalmers And Department Of Physics University Of Goteborg And Chalmers Un
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Willander Magnus
Department Of Physics Linkoping University
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Otsuji Taiichi
Japan Science And Technology Agency Crest
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HANABE Mitsuhiro
Kyushu Institute of Technology
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OTSUJI Taiichi
Kyushu Institute of Technology
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ISHIBASHI Takuma
Kyushu Institute of Technology
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UNO Tomohiro
Kyushu Institute of Technology
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Kimura Mineo
Graduate School Of Science And Engineering Yamaguchi University
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Ryzhii Victor
Univ. Aizu Fukushima Jpn
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Ryuzhii Maxim
University of Aizu
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Satou A
University Of Aizu
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Otsuji Taiichi
RIEC, Tohoku University, Sendai 980-8577, Japan
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Kimura Mineo
Graduate School of Science and Engineering, Yamagichi University
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Lukas Pichl
University of Aizu
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Horacek Jiri
Institute of Theoretical Physics, Oharles University
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Svintsov Dmitry
Institute of Physics and Technology RAS, Moscow 117218, Russia
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Vyurkov Vladimir
Institute of Physics and Technology RAS, Moscow 117218, Russia
著作論文
- Electric-Field Breakdown of Absolute Negative Conductivity and Supersonic Streams in Two-Dimensional Electron Systems with Zero Resistance/Conductance States
- High-Frequency Response of Metal-Semiconductor-Metal Photodetectors Limited by Dynamic and Recombination Effects
- Influence of Electron Velocity Overshoot Effect on High-Frequency Characteristics of Quantum Well Infrared Photodetectors
- Resonant-Tunneling Bipolar Transistors with a Quantum-Well Base
- Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation
- Resonant Detection and Mixing of Terahertz Radiation by Induced Base Hot Electron Transistors
- Electric-Field Breakdown of Absolute Negative Conductivity and Supersonic Streams in Two-Dimensional Electron Systems with Zero Resistance/Conductance States
- Radiation Induced Oscillations of the Hall Resistivity in Two-dimensional Electron Systems(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Monte Carlo Modeling of Electron Transport and Capture Processes in AlGaAs/GaAs Multiple Quantum Well Infrared Photodetectors
- Effect of "Mexican hat" on graphene bilayer field-effect transistor characteristics (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- 7aWF-5 Balance equation for electron transport in low temperature quantum dot devices