HANABE Mitsuhiro | Kyushu Institute of Technology
スポンサーリンク
概要
関連著者
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Otsuji Taiichi
Japan Science And Technology Agency Crest
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HANABE Mitsuhiro
Kyushu Institute of Technology
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Sano Eiichi
Hokkaido Univ. Sapporo Jpn
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Hanabe Mitsuhiro
Research Institute Of Electrical Communication Tohoku University
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Otsuji Taiichi
Tohoku Univ. Sendai Jpn
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Sano Eiichi
Research Center For Integrated Quantum Electronics Hokkaido University
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Nishimura Takuya
Graduate School Of Computer Science And Systems Engineering Kyushu Institute Of Technology:(present
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HANABE Mitsuhiro
Research Institute of Electrical Communication, Tohoku University
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NISHIMURA Takuya
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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HANABE Mitsuhiro
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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MIYAMOTO Masaki
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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Miyamoto Masaki
Graduate School Of Computer Science And Systems Engineering Kyushu Institute Of Technology
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MEZIANI Yahya
Research Institute of Electrical Communication, Tohoku University
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ASANO Tanemasa
Graduate School of Information Science and Electrical Engineering, Kyushu University
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Meziani Yahya
Research Institute Of Electrical Communication Tohoku University
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Moubarak Meziani
Research Institute Of Electrical Communication Tohoku University
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RYZHII Victor
University of Aizu
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OTSUJI Taiichi
Kyushu Institute of Technology
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ISHIBASHI Takuma
Kyushu Institute of Technology
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UNO Tomohiro
Kyushu Institute of Technology
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Ryzhii Victor
Univ. Aizu Fukushima Jpn
著作論文
- Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Threshold behavior of photoinduced plasmons-resonant self-oscillation in a new interdigitated grating gates device (Special issue: Solid state devices and materials)
- Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
- Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure
- Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
- Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation