Sano Eiichi | Research Center For Integrated Quantum Electronics Hokkaido University
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概要
関連著者
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Sano Eiichi
Research Center For Integrated Quantum Electronics Hokkaido University
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Sano Eiichi
Hokkaido Univ. Sapporo Jpn
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Otsuji Taiichi
Tohoku Univ. Sendai Jpn
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Otsuji Taiichi
Japan Science And Technology Agency Crest
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HANABE Mitsuhiro
Kyushu Institute of Technology
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Hanabe Mitsuhiro
Research Institute Of Electrical Communication Tohoku University
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HANABE Mitsuhiro
Research Institute of Electrical Communication, Tohoku University
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NISHIMURA Takuya
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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HANABE Mitsuhiro
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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MIYAMOTO Masaki
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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Nishimura Takuya
Graduate School Of Computer Science And Systems Engineering Kyushu Institute Of Technology:(present
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Miyamoto Masaki
Graduate School Of Computer Science And Systems Engineering Kyushu Institute Of Technology
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HASHIZUME Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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ANANTATHANASARN Sanguan
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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NEGORO Noboru
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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KUMAKURA Kazuhide
NTT Basic Research Laboratories, NTT Corporation
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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MEZIANI Yahya
Research Institute of Electrical Communication, Tohoku University
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ASANO Tanemasa
Graduate School of Information Science and Electrical Engineering, Kyushu University
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Meziani Yahya
Research Institute Of Electrical Communication Tohoku University
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Moubarak Meziani
Research Institute Of Electrical Communication Tohoku University
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IKEBE Masayuki
Graduate School of Information Science and Technology, Hokkaido University
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Sano Eiichi
Research Center For Integrated Quantum Electronics Hokkaido University:crest Japan Science And Techn
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INAFUNE Koji
Research Center for Integrated Quantum Electronics, Hokkaido University
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MATSUZAKI Hideaki
NTT Photonics Laboratories, NTT Corporation
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KOSUGI Toshihiko
NTT Photonics Laboratories, NTT Corporation
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ENOKI Takatomo
NTT Photonics Laboratories, NTT Corporation
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MAKIHARA Yukinobu
Graduate School of Information Science and Technology, Hokkaido University
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TANAKA Takeshi
Research Division, Saitama Red Cross Blood Center
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Makihara Yukinobu
Graduate School Of Information Science And Technology Hokkaido University
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Inafune Koji
Research Center For Integrated Quantum Electronics Hokkaido University
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Enoki Takatomo
Ntt Photonics Laboratories
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Enoki Takatomo
Ntt Photonics Laboratories Ntt Corporation
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Ikebe Masayuki
Graduate School Of Information Science And Technology Hokkaido University
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AKAZAWA Masamichi
Research Center for Integrated Quantum Electronics, Hokkaido University
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Kosugi Toshihiko
Ntt Photonics Laboratories
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University:crest Japan Science And Technology
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Matsuzaki Hideaki
Ntt Photonics Laboratories
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Matsuzaki Hideaki
Ntt Photonics Laboratories Ntt Corporation
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Otsuji Taiichi
Research Institute of Electrical Communication, Tohoku University
著作論文
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- 招待講演 Theoretical study on graphene field-effect transistors (Silicon devices and materials)
- Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors
- 招待講演 Theoretical study on graphene field-effect transistors (Electron devices)
- W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- Evaluation of Digitally Controlled PLL by Clock-Period Comparison(Analog Circuits and Related SoC Integration Technologies)
- Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
- Terahertz Wave Filter from Cascaded Thin-Metal-Film Meshes with a Triangular Array of Hexagonal Holes
- A Theoretical Comparison of Strained-Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors and Conventional Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using a Drift-Diffusion-Based Simulator