ENOKI Takatomo | NTT Photonics Laboratories, NTT Corporation

スポンサーリンク

概要

関連著者

もっと見る

著作論文

W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
W-band Waveguide Amplifier Module with InP-HEMT MMIC for Millimeter-wave Applications
High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
Double-Recess Structure with an InP Passivation Layer for 0.1-μm-Gate InP HEMTs( Heterostructure Microelectronics with TWHM2003)
The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization
InP-based High-speed Transistors and Their IC Applications
Delta-Sigma Modulator Using a Resonant-Tunneling Diode Quantizer
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors

もっと見る

スポンサーリンク